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IRF6709S2TRPBF

IRF6709S2TRPBF
Mfr. #:
IRF6709S2TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6709S2TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6709S2TRPBF DatasheetIRF6709S2TRPBF Datasheet (P4-P6)IRF6709S2TRPBF Datasheet (P7-P9)IRF6709S2TRPBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-S1
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
39 A
Rds On - Drain-Source-Widerstand:
10.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
8.1 nC
Pd - Verlustleistung:
21 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.74 mm
Länge:
4.85 mm
Transistortyp:
1 N-Channel
Breite:
3.95 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001530266
Tags
IRF670, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N Channel, MOSFET, 25V, 12A, DirectFET S1; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRF6709S2TRPBF
DISTI # IRF6709S2TRPBF-ND		Infineon Technologies AGMOSFET N-CH 25V 12A DIRECTFET-S1
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6709S2TRPBF
    DISTI # 70019594    		Infineon Technologies AGMOSFET,25V,12.000A,DIRECTFET-LV
    RoHS: Compliant    		0
    • 4800:$1.0400
    IRF6709S2TRPBF
    DISTI # 942-IRF6709S2TRPBF    		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      IRF6709S2TRPBF

      Mfr.#: IRF6709S2TRPBF

      OMO.#: OMO-IRF6709S2TRPBF

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      IRF6709S2TR1PBF

      Mfr.#: IRF6709S2TR1PBF

      OMO.#: OMO-IRF6709S2TR1PBF

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      IRF6709S2TR1PBF

      Mfr.#: IRF6709S2TR1PBF

      OMO.#: OMO-IRF6709S2TR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 12A DIRECTFET-S1
      IRF6709S2TRPBF

      Mfr.#: IRF6709S2TRPBF

      OMO.#: OMO-IRF6709S2TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IRF6709S2TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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