IRF6674TRPBF

IRF6674TRPBF
Mfr. #:
IRF6674TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6674TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Internationaler Gleichrichter
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Montageart
SMD/SMT
Handelsname
DirektFET
Paket-Koffer
DirectFET-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Quad Drain Dual Source
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
89 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Abfallzeit
8.7 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
67 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Widerstand
9 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
12 ns
Typische-Einschaltverzögerungszeit
7 ns
Qg-Gate-Ladung
24 nC
Kanal-Modus
Erweiterung
Tags
IRF667, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 11 mOhm 36 nC HEXFET® Power Mosfet - DirectFET®
*** Source Electronics
Benchmark MOSFETs Product Selection Guide | MOSFET N-CH 60V 13.4A DIRECTFET
***ernational Rectifier
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ineon
Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
Teil # Mfg. Beschreibung Aktie Preis
IRF6674TRPBF
DISTI # IRF6674TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 60V 13.4A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2430In Stock
  • 1000:$1.5229
  • 500:$1.8380
  • 100:$2.3632
  • 10:$2.9410
  • 1:$3.2600
IRF6674TRPBF
DISTI # IRF6674TRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 60V 13.4A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2430In Stock
  • 1000:$1.5229
  • 500:$1.8380
  • 100:$2.3632
  • 10:$2.9410
  • 1:$3.2600
IRF6674TRPBF
DISTI # IRF6674TRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 60V 13.4A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)
On Order
  • 4800:$1.3256
IRF6674TRPBF
DISTI # IRF6674TRPBF
Infineon Technologies AGTrans MOSFET N-CH 60V 13.4A 7-Pin Direct-FET MZ T/R - Tape and Reel (Alt: IRF6674TRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Reel
Americas - 0
  • 4800:$1.2900
  • 9600:$1.1900
  • 19200:$1.1900
  • 28800:$1.0900
  • 48000:$1.0900
IRF6674TRPBF
DISTI # SP001564538
Infineon Technologies AGTrans MOSFET N-CH 60V 13.4A 7-Pin Direct-FET MZ T/R (Alt: SP001564538)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel
Europe - 0
  • 4800:€1.5579
  • 9600:€1.2979
  • 19200:€1.1979
  • 28800:€1.1119
  • 48000:€1.0379
IRF6674TRPBF
DISTI # 70019588
Infineon Technologies AGMOSFET,60V,67A,11.2 MOHM,25 NC QG,MED CAN
RoHS: Compliant
0
  • 2:$2.8900
IRF6674TRPBF
DISTI # 942-IRF6674TRPBF
Infineon Technologies AGMOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
RoHS: Compliant
0
  • 1:$2.7300
  • 10:$2.3200
  • 100:$1.8600
  • 500:$1.6300
  • 1000:$1.3500
  • 2500:$1.2600
  • 4800:$1.2100
IRF6674TRPBF
DISTI # IRF6674TRPBF
Infineon Technologies AGN-Ch 60V 67A 89W 0,011R MZ
RoHS: Compliant
0
  • 10:€1.4200
  • 50:€1.2200
  • 200:€1.1200
  • 500:€1.0800
IRF6674TRPBF
DISTI # 2579989
Infineon Technologies AGMOSFET, N-CH, 60V, 67A, DIRECTFET MZ
RoHS: Compliant
0
  • 1:$5.1600
  • 10:$4.6600
  • 100:$3.7400
  • 500:$2.9100
  • 1000:$2.4100
Bild Teil # Beschreibung
IRF6674TRPBF

Mfr.#: IRF6674TRPBF

OMO.#: OMO-IRF6674TRPBF

MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
IRF6674TR1PBF

Mfr.#: IRF6674TR1PBF

OMO.#: OMO-IRF6674TR1PBF

MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
IRF6678TR1PBF

Mfr.#: IRF6678TR1PBF

OMO.#: OMO-IRF6678TR1PBF

MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
IRF6678

Mfr.#: IRF6678

OMO.#: OMO-IRF6678-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 30A DIRECTFET
IRF6678TR1PBF

Mfr.#: IRF6678TR1PBF

OMO.#: OMO-IRF6678TR1PBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 30A DIRECTFET
IRF6678TR1

Mfr.#: IRF6678TR1

OMO.#: OMO-IRF6678TR1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 30A DIRECTFET
IRF6674TRPBF

Mfr.#: IRF6674TRPBF

OMO.#: OMO-IRF6674TRPBF-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
IRF6674TR1PBF

Mfr.#: IRF6674TR1PBF

OMO.#: OMO-IRF6674TR1PBF-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
IRF6678TRPBF

Mfr.#: IRF6678TRPBF

OMO.#: OMO-IRF6678TRPBF-INFINEON-TECHNOLOGIES

MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IRF6674TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,64 $
1,64 $
10
1,55 $
15,53 $
100
1,47 $
147,15 $
500
1,39 $
694,90 $
1000
1,31 $
1 308,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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