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IRF6678TR1

IRF6678TR1
Mfr. #:
IRF6678TR1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 30A DIRECTFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6678TR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6678TR1 DatasheetIRF6678TR1 Datasheet (P4-P6)IRF6678TR1 Datasheet (P7-P9)IRF6678TR1 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IRF
Produktkategorie
FETs - Einzeln
Tags
IRF6678T, IRF6678, IRF667, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX packag
***ment14 APAC
MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:2.8W; Transistor Case Style:MX; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:5640pF; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:240A; Reverse Recovery Time trr Typ:43ns; SMD Marking:6678; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
Teil # Mfg. Beschreibung Aktie Preis
IRF6678TR1
DISTI # IRF6678TR1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6678TR1
    DISTI # IRF6678TR1CT-ND    		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
    RoHS: Not compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6678TR1PBF
      DISTI # IRF6678TR1PBFTR-ND      		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Limited Supply - Call
        IRF6678TR1PBF
        DISTI # IRF6678TR1PBFCT-ND        		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Limited Supply - Call
          IRF6678TR1PBF
          DISTI # IRF6678TR1PBFDKR-ND          		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
          RoHS: Compliant
          Min Qty: 1
          Container: Digi-Reel®          		Limited Supply - Call
            IRF6678TR1PBF
            DISTI # 70018852            		Infineon Technologies AG30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE,DIRECTFET MX PKG
            RoHS: Compliant            		0
            • 1000:$2.4300
            • 2000:$2.2300
            IRF6678TR1
            DISTI # N/A            		Infineon Technologies AGMOSFET0
              IRF6678TR1PBF
              DISTI # 942-IRF6678TR1PBF              		Infineon Technologies AGMOSFET 30V N-CH HEXFET 2.2mOhms 43nC
              RoHS: Compliant              		0
                IRF6678TR1
                DISTI # 1078426                		Infineon Technologies AGMOSFET, N, DIRECTFET, MX
                RoHS: Compliant                		0
                • 1:$4.6500
                • 10:$4.3600
                • 100:$3.9500
                • 250:$3.8100
                • 500:$3.6100
                • 1000:$3.6100
                IRF6678TR1PBF
                DISTI # 1436935                		Infineon Technologies AGMOSFET, N, DIRECTFET, 30V, MX
                RoHS: Compliant                		0
                • 1:$4.2700
                • 10:$4.0000
                • 100:$3.6300
                • 250:$3.4900
                • 500:$3.3100
                • 1000:$3.3100
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                		 MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                1500
                Menge eingeben:
                Der aktuelle Preis von IRF6678TR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
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                Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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