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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRLW530ATM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 752 | |
| IRLW530ATM DISTI # 512-IRLW530ATM | ON Semiconductor | MOSFET 100V N-Channel a-FET Logic Level RoHS: Compliant | 0 | |
| IRLW530ATM | Fairchild Semiconductor Corporation | 894 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IRLW510ATM OMO.#: OMO-IRLW510ATM |
MOSFET 100V N-Channel a-FET Logic Level |
|
Mfr.#: IRLW510A OMO.#: OMO-IRLW510A-1190 |
Neu und Original |
|
|
Mfr.#: IRLW510ATM |
MOSFET N-CH 100V 5.6A I2PAK |
|
|
Mfr.#: IRLW520A OMO.#: OMO-IRLW520A-1190 |
Neu und Original |
|
|
Mfr.#: IRLW520ATM OMO.#: OMO-IRLW520ATM-1190 |
MOSFET 100V N-Channel a-FET Logic Level |
|
|
Mfr.#: IRLW530A OMO.#: OMO-IRLW530A-1190 |
Neu und Original |
|
|
Mfr.#: IRLW530ATM OMO.#: OMO-IRLW530ATM-1190 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IRLW540A OMO.#: OMO-IRLW540A-1190 |
Neu und Original |