IRLW

IRLW510ATM vs IRLW510A vs IRLW520A

 
PartNumberIRLW510ATMIRLW510AIRLW520A
DescriptionMOSFET 100V N-Channel a-FET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current5.6 A--
Rds On Drain Source Resistance440 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min10.2 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.011640 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
IRLW630ATM MOSFET 200V N-Channel a-FET Logic Level
IRLW510ATM MOSFET 100V N-Channel a-FET Logic Level
IRLW510A Neu und Original
IRLW520A Neu und Original
IRLW520ATM MOSFET 100V N-Channel a-FET Logic Level
IRLW530A Neu und Original
IRLW530ATM Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRLW540A Neu und Original
IRLW610A Neu und Original
IRLW620ATM Neu und Original
IRLW630A Neu und Original
IRLW630ATM F630NS Neu und Original
IRLW630ATRRPBF Neu und Original
IRLW640A Neu und Original
IRLWI520A Neu und Original
IRLWI620A Neu und Original
IRLWZ44ATM Neu und Original
ON Semiconductor
ON Semiconductor
IRLW510ATM MOSFET N-CH 100V 5.6A I2PAK
IRLW630ATM MOSFET N-CH 200V 9A I2PAK
IRLW610ATM MOSFET N-CH 200V 3.3A I2PAK
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