MMDT5551-7-F

Mfr. #:: MMDT5551-7-F
Hersteller:: Diodes Incorporated
Beschreibung:: Bipolar Transistors - BJT 160V 200mW
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MMDT5551-7-F Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: MMDT5551-7-F Datasheet MMDT5551-7-F Datasheet (P4)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Eingebaute Dioden

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Montageart:: SMD/SMT

Paket / Koffer:: SOT-363-6

Polarität des Transistors:: NPN

Aufbau:: Dual

Kollektor- Emitterspannung VCEO Max:: 160 V

Kollektor- Basisspannung VCBO:: 180 V

Emitter- Basisspannung VEBO:: 6 V

Kollektor-Emitter-Sättigungsspannung:: 0.2 V

Maximaler DC-Kollektorstrom:: 0.2 A

Bandbreitenprodukt fT gewinnen:: 300 MHz

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: MMDT55

DC-Stromverstärkung hFE Max:: 250

Höhe:: 1 mm

Länge:: 2.2 mm

Verpackung:: Spule

Breite:: 1.35 mm

Marke:: Eingebaute Dioden

Kontinuierlicher Kollektorstrom:: 0.2 A

DC-Kollektor/Basisverstärkung hfe Min:: 80

Pd - Verlustleistung:: 200 mW

Produktart:: BJTs - Bipolartransistoren

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Gewichtseinheit:: 0.000212 oz

Tags: MMDT5551-7-F, MMDT5551-7, MMDT55, MMDT5, MMDT, MMD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MMDT5551-7-F Beschreibung

***ark: Transistor, Dual Npn, 160V, 200Ma, Sot-363-6, Full Reel; Transistor Polarity:dual Npn; Collector Emitter Voltage V(Br)Ceo:160V; Power Dissipation Pd:200Mw; Dc Collector Current:200Ma; Dc Current Gain Hfe:30Hfe; No. Of Pins:6Pins Rohs Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MMDT5551-7-F DISTI # MMDT5551-FDICT-ND	Diodes Incorporated	TRANS 2NPN 160V 0.2A SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	138095In Stock	1000:$0.1125 500:$0.1442 100:$0.2135 10:$0.3710 1:$0.5000
MMDT5551-7-F DISTI # MMDT5551-FDIDKR-ND	Diodes Incorporated	TRANS 2NPN 160V 0.2A SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	138095In Stock	1000:$0.1125 500:$0.1442 100:$0.2135 10:$0.3710 1:$0.5000
MMDT5551-7-F DISTI # MMDT5551-FDITR-ND	Diodes Incorporated	TRANS 2NPN 160V 0.2A SOT363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	135000In Stock	75000:$0.0665 30000:$0.0740 15000:$0.0784 6000:$0.0872 3000:$0.0960
MMDT5551-7-F DISTI # MMDT5551-7-F	Diodes Incorporated	Trans GP BJT NPN 160V 0.2A 6-Pin SOT-363 T/R - Cut TR (SOS) (Alt: MMDT5551-7-F) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 100	1:$0.0478 30:$0.0476 75:$0.0475 150:$0.0474 375:$0.0473 750:$0.0472 1500:$0.0471
MMDT5551-7-F DISTI # MMDT5551-7-F	Diodes Incorporated	Trans GP BJT NPN 160V 0.2A 6-Pin SOT-363 T/R - Tape and Reel (Alt: MMDT5551-7-F) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 231000	3000:$0.0452 6000:$0.0430 12000:$0.0410 18000:$0.0392 30000:$0.0383
MMDT5551-7-F DISTI # MMDT5551-7-F	Diodes Incorporated	Trans GP BJT NPN 160V 0.2A 6-Pin SOT-363 T/R (Alt: MMDT5551-7-F) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.0617 6000:€0.0583 12000:€0.0549 18000:€0.0529 30000:€0.0510
MMDT5551-7-F. DISTI # 81AC9197	Diodes Incorporated	SS HI VOLTAGE TRANSISTOR SOT363 T&R 3K ROHS COMPLIANT: YES	231000	30000:$0.0390 18000:$0.0400 12000:$0.0410 6000:$0.0430 1:$0.0460
MMDT5551-7-F DISTI # 70438368	Diodes Incorporated	Transistor Dual NPN 160V 0.2A SOT363-6 RoHS: Compliant	0	50:$0.1700 250:$0.1500 500:$0.1400 1250:$0.1300
MMDT5551-7-F DISTI # 621-MMDT5551-F	Diodes Incorporated	Bipolar Transistors - BJT 160V 200mW RoHS: Compliant	58754	1:$0.4500 10:$0.2890 100:$0.1240 1000:$0.0950 3000:$0.0720 9000:$0.0640 24000:$0.0600
MMDT5551-7 DISTI # 621-MMDT5551	Diodes Incorporated	Bipolar Transistors - BJT 160V 200mW RoHS: Not compliant	0
MMDT5551-7-F	Diodes Incorporated	MMDT5551 Series Dual NPN 160 V 200 mW Small Signal Transistor SMT - SOT-363 RoHS: Compliant	250Cut Tape/Mini-Reel	1:$0.0935 100:$0.0780 250:$0.0752 500:$0.0732 1500:$0.0701
MMDT5551-7-F DISTI # 7114976P	Zetex / Diodes Inc	TRANSISTOR DUAL NPN 160V 0.2A SOT363-6, RL	2275	1250:£0.0550 500:£0.0570 250:£0.0650 125:£0.0920
MMDT5551-7-F	Diodes Incorporated		1889
MMDT5551-7-F	Diodes Incorporated	INSTOCK	3005
MMDT5551-7-F	DIOIN	INSTOCK	3000
MMDT5551-7-F DISTI # 1773597	Diodes Incorporated	TRANSISTOR, NPN/NPN, SOT363 RoHS: Compliant	0	500:£0.0599 250:£0.0683 100:£0.0966 25:£0.1710 5:£0.2610
MMDT5551-7-F DISTI # XSFP00000103279	Diodes Incorporated	Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO,1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin RoHS: Compliant	12000 in Stock0 on Order	12000:$0.0953 3000:$0.1048

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von MMDT5551-7-F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,45 $~~; ~~0,45 $~~

10: ~~0,29 $~~; ~~2,89 $~~

100: ~~0,12 $~~; ~~12,40 $~~

1000: ~~0,10 $~~; ~~95,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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MMDT5551-7-F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes