 | |  | |
| PartNumber | MMDT5551-7-F | MMDT5551-7 | MMDT5551-7-F , CH494DPT |
| Description | Bipolar Transistors - BJT 160V 200mW | Bipolar Transistors - BJT 160V 200mW | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 160 V | 160 V | - |
| Collector Base Voltage VCBO | 180 V | 180 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 0.2 A | 0.2 A | - |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MMDT55 | MMDT5551 | - |
| DC Current Gain hFE Max | 250 | 250 | - |
| Height | 1 mm | 1 mm | - |
| Length | 2.2 mm | 2.2 mm | - |
| Packaging | Reel | Reel | - |
| Width | 1.35 mm | 1.35 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Continuous Collector Current | 0.2 A | 0.2 A | - |
| DC Collector/Base Gain hfe Min | 80 | 80 | - |
| Pd Power Dissipation | 200 mW | 200 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000212 oz | 0.000212 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
MMDT5551-7-F | Bipolar Transistors - BJT 160V 200mW | |
| MMDT5551-7 | Bipolar Transistors - BJT 160V 200mW | ||
| MMDT5551-7 | TRANS 2NPN 160V 0.2A SOT363 | ||
| MMDT5551-7-F , CH494DPT | Neu und Original | ||
| MMDT5551-7-F-CUT TAPE | Neu und Original | ||
| MMDT5551-7-F | TRANS 2NPN 160V 0.2A SOT363 |