FDS6680S

FDS6680S
Mfr. #:
FDS6680S
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SO-8 SGL N-CH 30V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDS6680S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS6680S DatasheetFDS6680S Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
11.5 A
Rds On - Drain-Source-Widerstand:
11 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
FDS6680S
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
3.9 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
34 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
FDS6680S_NL
Gewichtseinheit:
0.004586 oz
Tags
FDS6680, FDS668, FDS66, FDS6, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R
***S
French Electronic Distributor since 1988
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11.5A; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
FDS6680S
DISTI # FDS6680S-ND
ON SemiconductorMOSFET N-CH 30V 11.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    FDS6680S
    DISTI # 512-FDS6680S
    ON SemiconductorMOSFET SO-8 SGL N-CH 30V
    RoHS: Compliant
    0
      FDS6680S_D84Z
      DISTI # 512-FDS6680S_D84Z
      ON SemiconductorMOSFET 30V N-Ch PowerTrench
      RoHS: Not compliant
      0
        FDS6680SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        70638
        • 1000:$0.5300
        • 500:$0.5600
        • 100:$0.5800
        • 25:$0.6100
        • 1:$0.6500
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              FDS6680SFairchild Semiconductor CorporationINSTOCK6759
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                MOSFET 2N-CH 20V 9.4A 8-SOIC
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                5500
                Menge eingeben:
                Der aktuelle Preis von FDS6680S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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