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FF23MR12W1M1PB11BPSA1

FF23MR12W1M1PB11BPSA1
Mfr. #:
FF23MR12W1M1PB11BPSA1
Hersteller:
Infineon Technologies
Beschreibung:
Discrete Semiconductor Modules
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FF23MR12W1M1PB11BPSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FF23MR12W1M1PB11BPSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Produkt:
Leistungs-MOSFET-Module
Typ:
CoolSiC-MOSFET
Vf - Durchlassspannung:
4.6 V at 50 A
Vgs - Gate-Source-Spannung:
- 10 V, 20 V
Montageart:
Schraubbefestigung
Paket / Koffer:
AG-EASY1BM-2
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Aufbau:
Dual
Marke:
Infineon-Technologien
Polarität des Transistors:
N-Kanal
Abfallzeit:
12 ns
Id - Kontinuierlicher Drainstrom:
50 A
Pd - Verlustleistung:
20 mW
Produktart:
Diskrete Halbleitermodule
Rds On - Drain-Source-Widerstand:
22.5 mOhms
Anstiegszeit:
10 ns
Werkspackungsmenge:
30
Unterkategorie:
Diskrete Halbleitermodule
Handelsname:
EasyDUAL CoolSiC MOSFET
Typische Ausschaltverzögerungszeit:
43.5 ns
Typische Einschaltverzögerungszeit:
12 ns
Vds - Drain-Source-Durchbruchspannung:
1200 V
Vgs th - Gate-Source-Schwellenspannung:
3.45 V
Teil # Aliase:
FF23MR12W1M1P_B11 SP002739444
Tags
FF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Bild Teil # Beschreibung
FF23MR12W1M1B11BOMA1

Mfr.#: FF23MR12W1M1B11BOMA1

OMO.#: OMO-FF23MR12W1M1B11BOMA1

 Discrete Semiconductor Modules
FF23MR12W1M1PB11BPSA1

Mfr.#: FF23MR12W1M1PB11BPSA1

OMO.#: OMO-FF23MR12W1M1PB11BPSA1

 Discrete Semiconductor Modules
FF23MR12W1M1B11BOMA1

Mfr.#: FF23MR12W1M1B11BOMA1

OMO.#: OMO-FF23MR12W1M1B11BOMA1-INFINEON-TECHNOLOGIES

 MOSFET 2 N-CH 1200V 50A MODULE
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von FF23MR12W1M1PB11BPSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
98,89 $
98,89 $
5
97,07 $
485,35 $
10
92,71 $
927,10 $
25
89,61 $
2 240,25 $
100
83,44 $
8 344,00 $
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