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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
MMDF3N06VLR2 DISTI # MMDF3N06VLR2 | Rochester Electronics LLC | SO 8/N–Channel Enhancement–Mode Silicon Gate - Bulk (Alt: MMDF3N06VLR2) RoHS: Not Compliant Min Qty: 2273 Container: Bulk | Americas - 0 |
|
MMDF3N06VLR2 | ON Semiconductor | Power Field-Effect Transistor, 3.3A I(D), 60V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 118 |
|
MMDF3N06VLR2 | ON Semiconductor | TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,3.3A I(D),SO | 2440 |
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: MMDF3N02HD OMO.#: OMO-MMDF3N02HD-1190 |
3.8 A, 20 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET | |
Mfr.#: MMDF3N02HDR2 |
MOSFET N-CH 20V 3.8A 8-SOIC | |
Mfr.#: MMDF3N03HDR2 OMO.#: OMO-MMDF3N03HDR2-1190 |
Power Field-Effect Transistor, 4.1A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: MMDF3N03HDR2(D3N03) OMO.#: OMO-MMDF3N03HDR2-D3N03--1190 |
Neu und Original | |
Mfr.#: MMDF3N03HDR2G OMO.#: OMO-MMDF3N03HDR2G-1190 |
Neu und Original | |
Mfr.#: MMDF3N04HD OMO.#: OMO-MMDF3N04HD-1190 |
Neu und Original | |
Mfr.#: MMDF3N04HDR2 |
MOSFET 2N-CH 40V 3.4A 8-SOIC | |
Mfr.#: MMDF3N04HDR2G |
MOSFET 2N-CH 40V 3.4A 8-SOIC | |
Mfr.#: MMDF3N06HDR2 OMO.#: OMO-MMDF3N06HDR2-1190 |
Neu und Original | |
Mfr.#: MMDF3N06VLR2 OMO.#: OMO-MMDF3N06VLR2-1190 |
SO 8/N–Channel Enhancement–Mode Silicon Gate - Bulk (Alt: MMDF3N06VLR2) |