MMDF3N

MMDF3N02HDR2 vs MMDF3N02HDR2G vs MMDF3N04HDR2

 
PartNumberMMDF3N02HDR2MMDF3N02HDR2GMMDF3N04HDR2
DescriptionMOSFET 20V 3A N-ChannelMOSFET P-CH 20V 3.8A 8-SOICMOSFET 2N-CH 40V 3.4A 8-SOIC
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSN--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance90 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length5 mm--
Transistor Type2 N-Channel--
TypeMOSFET--
Width4 mm--
BrandON Semiconductor--
Forward Transconductance Min3.88 S--
Fall Time20 ns, 21 ns--
Product TypeMOSFET--
Rise Time58 ns, 32 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns, 27 ns--
Typical Turn On Delay Time11 ns, 7 ns--
Unit Weight0.006596 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
MMDF3N04HDR2G MOSFET NFET SO8D 40V 3.4A 80mOhm
MMDF3N02HDR2 MOSFET 20V 3A N-Channel
MMDF3N02HDR2 MOSFET N-CH 20V 3.8A 8-SOIC
MMDF3N02HDR2G MOSFET P-CH 20V 3.8A 8-SOIC
MMDF3N04HDR2 MOSFET 2N-CH 40V 3.4A 8-SOIC
MMDF3N04HDR2G MOSFET 2N-CH 40V 3.4A 8-SOIC
MMDF3N02HD 3.8 A, 20 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
MMDF3N03HD Neu und Original
MMDF3N03HDR Neu und Original
MMDF3N03HDR2(D3N03) Neu und Original
MMDF3N03HDR2G Neu und Original
MMDF3N03ND Neu und Original
MMDF3N04HD Neu und Original
MMDF3N04HDR2G SOP8 Neu und Original
MMDF3N06HDR2 Neu und Original
MMDF3N06VLR2 SO 8/N–Channel Enhancement–Mode Silicon Gate - Bulk (Alt: MMDF3N06VLR2)
MMDF3N06VLR2G Neu und Original
MMDF3N03HDR2 Power Field-Effect Transistor, 4.1A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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