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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| TK35E08N1SXS | Toshiba America Electronic Components | Power Field-Effect Transistor, 35A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 200 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: TK35E08N1,S1X OMO.#: OMO-TK35E08N1-S1X |
MOSFET 80V N-Ch PWR FET 55A 72W 25nC |
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Mfr.#: TK35E08N1,S1X |
MOSFET 80V N-Ch PWR FET 55A 72W 25nC |
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Mfr.#: TK35E08N1,S1X(S OMO.#: OMO-TK35E08N1-S1X-S-1190 |
MOSFET N-CHANNEL 80V 55A TO220, PK |
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Mfr.#: TK35E08N1S1X OMO.#: OMO-TK35E08N1S1X-1190 |
MOSFET POWER MOSFET TRANSISTOR |
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Mfr.#: TK35E08N1 OMO.#: OMO-TK35E08N1-1190 |
MOSFET N-CH 80V 35A U-MOS TO220, TU |
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Mfr.#: TK35E08N1S1X(S OMO.#: OMO-TK35E08N1S1X-S-1190 |
Neu und Original |
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Mfr.#: TK35E08N1SXS OMO.#: OMO-TK35E08N1SXS-1190 |
Power Field-Effect Transistor, 35A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: TK35E08N1S1X-ND OMO.#: OMO-TK35E08N1S1X-ND-1190 |
Neu und Original |