TK35E

TK35E08N1,S1X vs TK35E08N1,S1X(S vs TK35E08N1

 
PartNumberTK35E08N1,S1XTK35E08N1,S1X(STK35E08N1
DescriptionMOSFET 80V N-Ch PWR FET 55A 72W 25nCMOSFET N-CHANNEL 80V 55A TO220, PKMOSFET N-CH 80V 35A U-MOS TO220, TU
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current55 A--
Rds On Drain Source Resistance12.2 mOhms--
Vgs Gate Source Voltage10 V--
Qg Gate Charge25 nC--
Pd Power Dissipation72 W--
ConfigurationSingle--
Height15.1 mm--
Length10.16 mm--
SeriesTK35E08N1--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TK35E08N1,S1X MOSFET 80V N-Ch PWR FET 55A 72W 25nC
TK35E10K3(S1SS-Q) MOSFET N-Ch MOS 55A 80V 72W 0.0122 Ohm
TK35E10K3(S1SS-Q) MOSFET N-Ch MOS 55A 80V 72W 0.0122 Ohm
TK35E08N1,S1X MOSFET 80V N-Ch PWR FET 55A 72W 25nC
TK35E08N1,S1X(S MOSFET N-CHANNEL 80V 55A TO220, PK
TK35E08N1S1X MOSFET POWER MOSFET TRANSISTOR
TK35E08N1 MOSFET N-CH 80V 35A U-MOS TO220, TU
TK35E08N1S1X(S Neu und Original
TK35E08N1SXS Power Field-Effect Transistor, 35A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
TK35E100K3 Neu und Original
TK35E10K3 Neu und Original
TK35E08N1S1X-ND Neu und Original
TK35E10K3(S1SS-Q)-ND Neu und Original
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