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DMN3035LWN-7

DMN3035LWN-7
Mfr. #:
DMN3035LWN-7
Hersteller:
Diodes Incorporated
Beschreibung:
IGBT Transistors MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN3035LWN-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMN3035LWN-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Arrays
Serie
DMN3035
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
8-PowerVDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
V-DFN3020-8
Aufbau
Dual
FET-Typ
2 N-Channel (Dual)
Leistung max
770mW
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
399pF @ 15V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
5.5A
Rds-On-Max-Id-Vgs
35 mOhm @ 4.8A, 10V
Vgs-th-Max-Id
2V @ 250μA
Gate-Lade-Qg-Vgs
9.9nC @ 10V
Pd-Verlustleistung
1.78 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
2 ns 2 ns
Anstiegszeit
3.3 ns 3.3 ns
Vgs-Gate-Source-Spannung
+/- 20 V +/- 20 V
ID-Dauer-Drain-Strom
5.5 A 5.5 A
Vds-Drain-Source-Breakdown-Voltage
30 V 30 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V 1 V
Rds-On-Drain-Source-Widerstand
45 mOhms 45 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
10.6 ns 10.6 ns
Typische-Einschaltverzögerungszeit
3 ns 3 ns
Qg-Gate-Ladung
9.9 nC 9.9 nC
Vorwärts-Transkonduktanz-Min
-
Kanal-Modus
Erweiterung
Tags
DMN303, DMN30, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-Channel 30V 5.5A 8-Pin VDFN T/R
***ure Electronics
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 770mW Surface Mount V-DFN3020-8
***ical
Trans MOSFET N-CH 30V 5.5A 8-Pin VDFN T/R
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Teil # Mfg. Beschreibung Aktie Preis
DMN3035LWN-7
DISTI # DMN3035LWN-7DITR-ND		Diodes IncorporatedMOSFET 2N-CH 30V 5.5A 8VDFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1817
DMN3035LWN-7
DISTI # DMN3035LWN-7DICT-ND		Diodes IncorporatedMOSFET 2N-CH 30V 5.5A 8VDFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2053
  • 500:$0.2657
  • 100:$0.3623
  • 10:$0.4830
  • 1:$0.5700
DMN3035LWN-7
DISTI # DMN3035LWN-7DIDKR-ND		Diodes IncorporatedMOSFET 2N-CH 30V 5.5A 8VDFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2053
  • 500:$0.2657
  • 100:$0.3623
  • 10:$0.4830
  • 1:$0.5700
DMN3035LWN-7
DISTI # DMN3035LWN-7		Diodes IncorporatedMOSFET BVDSS: 25V~30V V-DFN3020-8 T&R 3K - Tape and Reel (Alt: DMN3035LWN-7)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1269
  • 6000:$0.1199
  • 12000:$0.1149
  • 18000:$0.1089
  • 30000:$0.1069
DMN3035LWN-7
DISTI # 621-DMN3035LWN-7		Diodes IncorporatedMOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF
RoHS: Compliant		1
  • 1:$0.4700
  • 10:$0.3850
  • 100:$0.2350
  • 1000:$0.1820
  • 3000:$0.1550
DMN3035LWN-13
DISTI # 621-DMN3035LWN-13		Diodes IncorporatedMOSFET MOSFET BVDSS: 25V~30V V-DFN3020-8 T&R 10K0
  • 1:$0.4700
  • 10:$0.3830
  • 100:$0.2340
  • 1000:$0.1810
  • 2500:$0.1540
Bild Teil # Beschreibung
DMN3033LDM-7

Mfr.#: DMN3033LDM-7

OMO.#: OMO-DMN3033LDM-7

 MOSFET NMOS-SINGLE
DMN3033LSNQ-7

Mfr.#: DMN3033LSNQ-7

OMO.#: OMO-DMN3033LSNQ-7

 MOSFET 30V N-Ch Enh FET 20Vgs 6A 1.4W 2.1V
DMN3032LFDB-7

Mfr.#: DMN3032LFDB-7

OMO.#: OMO-DMN3032LFDB-7

 MOSFET MOSFET BVDSS
DMN3031LSS-13

Mfr.#: DMN3031LSS-13

OMO.#: OMO-DMN3031LSS-13

 MOSFET SINGLE N-CHANNEL
DMN3031LSS

Mfr.#: DMN3031LSS

OMO.#: OMO-DMN3031LSS-1190

 Neu und Original
DMN3033LSD

Mfr.#: DMN3033LSD

OMO.#: OMO-DMN3033LSD-1190

 MOSFET, NN CH, W DIOD, 30V, 6.9A, SO8
DMN3033LSD-13-F

Mfr.#: DMN3033LSD-13-F

OMO.#: OMO-DMN3033LSD-13-F-1190

 Neu und Original
DMN3033LSN

Mfr.#: DMN3033LSN

OMO.#: OMO-DMN3033LSN-1190

 Neu und Original
DMN3032LE-13-CUT TAPE

Mfr.#: DMN3032LE-13-CUT TAPE

OMO.#: OMO-DMN3032LE-13-CUT-TAPE-1190

 Neu und Original
DMN3033LSD-13

Mfr.#: DMN3033LSD-13

OMO.#: OMO-DMN3033LSD-13-DIODES

 MOSFET NMOS-DUAL
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von DMN3035LWN-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,16 $
0,16 $
10
0,15 $
1,52 $
100
0,14 $
14,43 $
500
0,14 $
68,15 $
1000
0,13 $
128,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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