FDN361AN

Mfr. #:: FDN361AN
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 30V 1.8A SSOT-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDN361AN Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: FDN361AN, FDN361A, FDN361, FDN36, FDN3, FDN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDN361AN Beschreibung

***et: Trans MOSFET N-CH 30V 1.8A 3-Pin SuperSOT T/R

***el Electronic: PMIC - Voltage Regulators - DC DC Switching Regulators 3 (168 Hours) Cut Tape (CT) 16 Weeks DUAL 6 SWITCHING REGULATOR SOT-23-6 1 IC REG BUCK ADJ 3A SYNC TSOT23-6

***ark: MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:1.8A; Resistance, Rds On:0.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOT-23; Termination ;RoHS Compliant: Yes

***emi: N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.6A, 125mΩ

***ure Electronics: N-Channel 30 V 0.125 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3

***ment14 APAC: MOSFET, N, SMD, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:1.6A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS

*** Source Electronics: Trans MOSFET P-CH 30V 2.3A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 2.3A SOT-23-3

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.25 W

***ure Electronics: Single P-Channel 30 V 165 mOhm 2 nC HEXFET® Power Mosfet - MICRO-3

***ark: P Channel, MOSFET, -30V, -2.3 A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.3V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***emi: N-Channel Logic Level PowerTrench® MOSFET 30V, 1.4A, 160mΩ

*** Source Electronics: Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.4A SSOT3

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Current Temperature:25°C; Device Marking:NDS351AN; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS351AN; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***emi: Single N-Channel Power MOSFET 30V, 2.5A, 110mΩ

***ser: MOSFETs- Power and Small Signal 30V 2.5A N-Channel

***r Electronics: Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***itex: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.1ohm; 1.3W; -55+150 deg.C; SMD; SOT23

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

*** Source Electronics: MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R

***ure Electronics: Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***(Formerly Allied Electronics): MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23

***roFlash: Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 98Milliohms;ID -3A;Micro3;PD 1.25W;-55degc

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***el Electronic: Surface Mount Ceramic Multilayer Capacitor 0.0022uF 10% X7R 100V 0805 Paper T/R

***ure Electronics: Single P-Channel 30 V 165 mOhm 14 nC HEXFET® Power Mosfet - MICRO-3

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-3A; On Resistance, Rds(on):98mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:Micro3 ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; Low Profile (less than 1.1mm); P-Channel MOSFET; SOT-23 Footprint | Target Applications: DC Switches; Load Switch

***nell: MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 1.25W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 24A; SMD Marking: 1H; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vgs th Max: -2.5V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDN361AN DISTI # FDN361AN-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A SSOT-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDN361AN DISTI # FDN361AN	ON Semiconductor	Trans MOSFET N-CH 30V 1.8A 3-Pin SuperSOT T/R - Bulk (Alt: FDN361AN) RoHS: Compliant Min Qty: 1471 Container: Bulk	Americas - 0	14710:$0.2089 7355:$0.2149 4413:$0.2169 2942:$0.2199 1471:$0.2219
FDN361AN DISTI # 512-FDN361AN	ON Semiconductor	MOSFET SSOT-3 N-CH 30V RoHS: Compliant	0
FDN361AN	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	241265	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDN357N OMO.#: OMO-FDN357N	MOSFET SSOT-3 N-CH 30V
	Mfr.#: FDN336P OMO.#: OMO-FDN336P-ON-SEMICONDUCTOR	Neu und Original
	Mfr.#: FDN304PZ-NL OMO.#: OMO-FDN304PZ-NL-1190	Neu und Original
	Mfr.#: FDN306P(306) OMO.#: OMO-FDN306P-306--1190	Neu und Original
	Mfr.#: FDN338P 338 OMO.#: OMO-FDN338P-338-1190	Neu und Original
	Mfr.#: FDN357/357 OMO.#: OMO-FDN357-357-1190	Neu und Original
	Mfr.#: FDN357N OMO.#: OMO-FDN357N-ON-SEMICONDUCTOR	MOSFET N-CH 30V 1.9A SSOT3
	Mfr.#: FDN358P OMO.#: OMO-FDN358P-ON-SEMICONDUCTOR	Neu und Original
	Mfr.#: FDN371N-NL , 1N5249BRL OMO.#: OMO-FDN371N-NL-1N5249BRL-1190	Neu und Original
	Mfr.#: FDN359AN-CUT TAPE OMO.#: OMO-FDN359AN-CUT-TAPE-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von FDN361AN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,31 $~~; ~~0,31 $~~

10: ~~0,30 $~~; ~~2,98 $~~

100: ~~0,28 $~~; ~~28,20 $~~

500: ~~0,27 $~~; ~~133,15 $~~

1000: ~~0,25 $~~; ~~250,70 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDN361AN 5
FDN361A 6
FDN361 8
FDN36 30
FDN3 253
FDN 332

FDN361AN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes