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SIHW30N60E-GE3

SIHW30N60E-GE3
Mfr. #:
SIHW30N60E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHW30N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHW30N60E-GE3 DatasheetSIHW30N60E-GE3 Datasheet (P4-P6)SIHW30N60E-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHW30N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
29 A
Rds On - Drain-Source-Widerstand:
125 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.8 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
85 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Schüttgut
Höhe:
20.82 mm
Länge:
15.87 mm
Serie:
E
Breite:
5.31 mm
Marke:
Vishay / Siliconix
Abfallzeit:
36 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
480
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
63 ns
Typische Einschaltverzögerungszeit:
19 ns
Gewichtseinheit:
1.340411 oz
Tags
SIHW3, SIHW, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 29A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
***ical
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AD
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-247AD
***nell
MOSFET, N CH, 600V, 29A, TO-247AD-3
***i-Key
MOSFET N-CH 600V 29A TO-247AD
***
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHW30N60E-GE3
DISTI # SIHW30N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO-247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		161In Stock
  • 100:$4.7093
  • 25:$5.4336
  • 10:$5.7480
  • 1:$6.4000
SIHW30N60E-GE3
DISTI # SIHW30N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin TO-247AD - Tape and Reel (Alt: SIHW30N60E-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
    SIHW30N60E-GE3
    DISTI # 68W7076    		Vishay IntertechnologiesMOSFET, N CH, 600V, 29A, TO-247AD-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
      SIHW30N60E-GE3
      DISTI # 78-SIHW30N60E-GE3      		Vishay IntertechnologiesMOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
      RoHS: Compliant      		480
      • 1:$6.4400
      • 10:$5.3300
      • 100:$4.3900
      • 250:$4.2500
      • 500:$3.8100
      • 1000:$3.2100
      • 2500:$3.0500
      SIHW30N60E-GE3Vishay Intertechnologies 500
        SIHW30N60E-GE3Vishay IntertechnologiesMOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
        RoHS: Compliant        		Americas -
          Bild Teil # Beschreibung
          SIHW30N60E-GE3

          Mfr.#: SIHW30N60E-GE3

          OMO.#: OMO-SIHW30N60E-GE3

          		 MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
          SIHW30N60E-GE3

          Mfr.#: SIHW30N60E-GE3

          OMO.#: OMO-SIHW30N60E-GE3-VISHAY

          		 MOSFET N-CH 600V 29A TO-247AD
          Verfügbarkeit
          Aktie:
          480
          Auf Bestellung:
          2463
          Menge eingeben:
          Der aktuelle Preis von SIHW30N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          6,44 $
          6,44 $
          10
          5,33 $
          53,30 $
          100
          4,39 $
          439,00 $
          250
          4,25 $
          1 062,50 $
          500
          3,81 $
          1 905,00 $
          1000
          3,21 $
          3 210,00 $
          2500
          3,05 $
          7 625,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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