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| PartNumber | SIHW30N60E-GE3 | SIHW33N60E-GE3 |
| Description | MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS | MOSFET 600V Vds 30V Vgs TO-247AD |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | TO-263-3 | TO-247AD-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 29 A | 33 A |
| Rds On Drain Source Resistance | 125 mOhms | 99 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.8 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 85 nC | 100 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 278 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Bulk | Tube |
| Height | 20.82 mm | - |
| Length | 15.87 mm | - |
| Series | E | E |
| Width | 5.31 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 36 ns | 54 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 32 ns | 60 ns |
| Factory Pack Quantity | 480 | 480 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 63 ns | 99 ns |
| Typical Turn On Delay Time | 19 ns | 28 ns |
| Unit Weight | 1.340411 oz | 1.340411 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHW30N60E-GE3 | MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS | |
| SIHW33N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AD | ||
Vishay |
SIHW30N60E-GE3 | MOSFET N-CH 600V 29A TO-247AD | |
| SIHW33N60E-GE3 | MOSFET N-CH 600V 33A TO-247AD | ||
| SIHW33N60E | Neu und Original |