IXTP10N60P

IXTP10N60P
Mfr. #:
IXTP10N60P
Hersteller:
IXYS
Beschreibung:
IGBT Transistors MOSFET 10.0 Amps 600 V 0.74 Ohm Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP10N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP10N60P DatasheetIXTP10N60P Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXTP10N60
Verpackung
Rohr
Gewichtseinheit
0.081130 oz
Montageart
Durchgangsloch
Handelsname
PolarHV
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
200 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
18 ns
Anstiegszeit
24 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
10 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Widerstand
740 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
55 ns
Typische-Einschaltverzögerungszeit
20 ns
Qg-Gate-Ladung
32 nC
Vorwärts-Transkonduktanz-Min
6 S
Kanal-Modus
Erweiterung
Tags
IXTP10, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IXTP10N60P
DISTI # IXTP10N60P-ND
IXYS CorporationMOSFET N-CH 600V 10A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$2.4000
IXTP10N60PM
DISTI # IXTP10N60PM-ND
IXYS CorporationMOSFET N-CH 600V 5A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$2.2750
IXTP10N60P
DISTI # 747-IXTP10N60P
IXYS CorporationMOSFET 10.0 Amps 600 V 0.74 Ohm Rds
RoHS: Compliant
19
  • 1:$3.4200
  • 10:$3.0900
  • 25:$2.6900
  • 50:$2.5200
  • 100:$2.4800
  • 250:$2.0200
  • 500:$1.9300
  • 1000:$1.6000
  • 2500:$1.3400
Bild Teil # Beschreibung
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Mfr.#: IXTP160N04T2

OMO.#: OMO-IXTP160N04T2

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Mfr.#: IXTP180N10T

OMO.#: OMO-IXTP180N10T

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Mfr.#: IXTP10P50P

OMO.#: OMO-IXTP10P50P-IXYS-CORPORATION

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IXTP110N055T

Mfr.#: IXTP110N055T

OMO.#: OMO-IXTP110N055T-IXYS-CORPORATION

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IXTP140P05T

Mfr.#: IXTP140P05T

OMO.#: OMO-IXTP140P05T-IXYS-CORPORATION

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Mfr.#: IXTP1R4N100P

OMO.#: OMO-IXTP1R4N100P-IXYS-CORPORATION

IGBT Transistors MOSFET 1.4 Amps 1000V 11 Rds
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Mfr.#: IXTP110N055T2

OMO.#: OMO-IXTP110N055T2-IXYS-CORPORATION

IGBT Transistors MOSFET 110 Amps 55V 0.0066 Rds
IXTP15N20T

Mfr.#: IXTP15N20T

OMO.#: OMO-IXTP15N20T-IXYS-CORPORATION

MOSFET 15 Amps 200V 180 Rds
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IXTP10N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,01 $
2,01 $
10
1,91 $
19,10 $
100
1,81 $
180,90 $
500
1,71 $
854,25 $
1000
1,61 $
1 608,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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