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IXTP1N120P

IXTP1N120P
Mfr. #:
IXTP1N120P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 1 Amps 1200V 20 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP1N120P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP1N120P DatasheetIXTP1N120P Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
1 A
Rds On - Drain-Source-Widerstand:
20 Ohms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
63 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
9.15 mm
Länge:
10.66 mm
Serie:
IXTP1N120
Transistortyp:
1 N-Channel
Breite:
4.82 mm
Marke:
IXYS
Abfallzeit:
27 ns
Produktart:
MOSFET
Anstiegszeit:
28 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
54 ns
Typische Einschaltverzögerungszeit:
20 ns
Gewichtseinheit:
0.081130 oz
Tags
IXTP1N1, IXTP1N, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***nell
MOSFET, N CH, 1KV, 3.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.75A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; P
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***emi
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900V 4A 47W 4.2´Î@10V2A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***roFlash
Mosfet Transistor, N Channel, 6.5 A, 1 Kv, 1.6 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***ser
Power MOSFET Transistors N-Ch 1000 V 1.6 Ohm 6.5 A SuperMESH
***icroelectronics
N-CHANNEL 1000V - 1.60Ohm - 6.5A - TO-220 - TO-220FP
***ical
Trans MOSFET N-CH 1KV 6.5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CH, 1000V, 6.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V;
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 6.5A I(D), 1000V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F
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N-Channel 900 V 2.3 Ohm Through Hole Mosfet - TO-220F
***ical
Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220FP Rail
***enic
900V 6A 56W 2.3´Î@10V3A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ment14 APAC
MOSFET, N CH, 900V, 6A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:900V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, 900V; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 56W; Transistor Case Style: TO-220F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 900V; Voltage Vgs Rds on Measurement: 10V
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N-Channel 1500 V 2.5 A 10.5 Ohm Flange Mount Power Mosfet -TO220FP
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Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-220F-3FS Tube
***ark
MOSFET, N CHANNEL, 1.5KV, 8OHM, TO-220F-3; Channel Type:N Channel; Drain Source Voltage Vds:1.5kV; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
***icroelectronics
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
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MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipa
***r Electronics
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Teil # Mfg. Beschreibung Aktie Preis
IXTP1N120P
DISTI # IXTP1N120P-ND		IXYS CorporationMOSFET N-CH 1200V 1A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$2.9700
IXTP1N120P
DISTI # 747-IXTP1N120P		IXYS CorporationMOSFET 1 Amps 1200V 20 Rds
RoHS: Compliant		519
  • 1:$3.8600
  • 10:$3.4500
  • 25:$3.0000
  • 50:$2.9400
  • 100:$2.8300
  • 250:$2.4200
  • 500:$2.2900
  • 1000:$1.9300
  • 2500:$1.6600
Bild Teil # Beschreibung
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IXTP1R6N50D2

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 MOSFET N-CH MOSFETS (D2) 500V 1.6A
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Verfügbarkeit
Aktie:
519
Auf Bestellung:
2502
Menge eingeben:
Der aktuelle Preis von IXTP1N120P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,86 $
3,86 $
10
3,45 $
34,50 $
25
3,00 $
75,00 $
50
2,94 $
147,00 $
100
2,83 $
283,00 $
250
2,42 $
605,00 $
500
2,29 $
1 145,00 $
1000
1,93 $
1 930,00 $
2500
1,66 $
4 150,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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