IPD079N06L3GBTMA1

Mfr. #:: IPD079N06L3GBTMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD079N06L3GBTMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPD079N06L3GBTMA1 Datasheet IPD079N06L3GBTMA1 Datasheet (P4-P6)IPD079N06L3GBTMA1 Datasheet (P7-P9)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 50 A

Rds On - Drain-Source-Widerstand:: 6.3 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.2 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 29 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 79 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Serie:: OptiMOS 3

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 36 S

Abfallzeit:: 7 ns

Produktart:: MOSFET

Anstiegszeit:: 26 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 37 ns

Typische Einschaltverzögerungszeit:: 15 ns

Teil # Aliase:: G IPD079N06L3 IPD79N6L3GXT SP000453626

Gewichtseinheit:: 0.139332 oz

Tags: IPD079N06L3G, IPD079, IPD07, IPD0, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD079N06L3GBTMA1 Beschreibung

***ark: MOSFET Transistor, N Channel, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V

***ure Electronics: Single N-Channel 60 V 7.9 mOhm 22 nC OptiMOS Power Mosfet - DPAK

***p One Stop Japan: Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R

***ical: Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK

***et Europe: Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R

***an P&S: 60V,7.9mΩ,50A,N-Channel Power MOSFET

***o-Tech: MOSFET N-Ch 60V 50A OptiMOS3 TO252

***i-Key: MOSFET N-CH 60V 50A TO252-3

***ronik: N-CH 60V 50A 7,9mOhm TO252-3

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:79W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 60V, 50A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0063ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:79W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD079N06L3GBTMA1 DISTI # V72:2272_06384373	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1501	1000:$0.3161 500:$0.3512 250:$0.3902 100:$0.4920 25:$0.5467 10:$0.6074 1:$0.6749
IPD079N06L3GBTMA1 DISTI # V36:1790_06384373	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD079N06L3GBTMA1 DISTI # IPD079N06L3GBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	16544In Stock	1000:$0.4886 500:$0.6189 100:$0.7981 10:$1.0100 1:$1.1400
IPD079N06L3GBTMA1 DISTI # IPD079N06L3GBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	16544In Stock	1000:$0.4886 500:$0.6189 100:$0.7981 10:$1.0100 1:$1.1400
IPD079N06L3GBTMA1 DISTI # IPD079N06L3GBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 50A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	15000In Stock	2500:$0.4427
IPD079N06L3GBTMA1 DISTI # 31699392	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	100000	2500:$0.3734
IPD079N06L3GBTMA1 DISTI # 32864341	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.5517
IPD079N06L3GBTMA1 DISTI # 30679643	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1501	1000:$0.3398 500:$0.3775 250:$0.4195 100:$0.5289 25:$0.5877 20:$0.6530
IPD079N06L3GBTMA1 DISTI # IPD079N06L3GBTMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD079N06L3GBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3309 5000:$0.3189 10000:$0.3069 15000:$0.2969 25000:$0.2919
IPD079N06L3GBTMA1 DISTI # 79X1435	Infineon Technologies AG	Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 79X1435) RoHS: Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0
IPD079N06L3GBTMA1 DISTI # 79X1435	Infineon Technologies AG	MOSFET, N-CH, 60V, 50A, TO-252- 3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes	5	1:$0.4190 10:$0.4190 25:$0.4190 50:$0.4190 100:$0.4190 250:$0.4190 500:$0.4190 1000:$0.4190
IPD079N06L3GBTMA1	Infineon Technologies AG	Single N-Channel 60 V 7.9 mOhm 22 nC OptiMOS Power Mosfet - DPAK RoHS: Not Compliant	2500Reel	2500:$0.3150
IPD079N06L3GBTMA1 DISTI # 726-IPD079N06L3GBTMA	Infineon Technologies AG	MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 RoHS: Compliant	2553	1:$0.9400 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320 2500:$0.3830 10000:$0.3690
IPD079N06L3 G DISTI # 726-IPD079N06L3G	Infineon Technologies AG	MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 RoHS: Compliant	577	1:$0.9400 10:$0.8050 100:$0.6190 500:$0.5470 1000:$0.4320 2500:$0.3830 10000:$0.3690
IPD079N06L3GBTMA1 DISTI # 8275088P	Infineon Technologies AG	MOSFET N-CH 50A 60V OPTIMOS P3 TO252, RL	2450	250:£0.3210
IPD079N06L3GBTMA1 DISTI # IPD079N06L3GBTMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,50A,79W,PG-TO252-3	1757	1:$0.7869 5:$0.7398 25:$0.6726 100:$0.5717 500:$0.4708
IPD079N06L3GBTMA1 DISTI # 2432728RL	Infineon Technologies AG	MOSFET, N CH, 60V, 50A, TO-252-3 RoHS: Compliant	0	500:$0.8240 100:$0.9330 10:$1.2100 1:$1.4200
IPD079N06L3GBTMA1 DISTI # 2432728	Infineon Technologies AG	MOSFET, N CH, 60V, 50A, TO-252-3 RoHS: Compliant	4534	500:$0.8240 100:$0.9330 10:$1.2100 1:$1.4200
IPD079N06L3GBTMA1 DISTI # 2432728	Infineon Technologies AG	MOSFET, N CH, 60V, 50A, TO-252-3 RoHS: Compliant	4664	500:£0.4260 250:£0.4540 100:£0.4820 25:£0.6260 5:£0.7010

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	Mfr.#: C0805J104K5RACAUTO OMO.#: OMO-C0805J104K5RACAUTO	Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.1uF X7R 0805 10% AEC-Q200
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	Mfr.#: BAT54SHMFHT116 OMO.#: OMO-BAT54SHMFHT116-ROHM-SEMI	DIODE ARRAY SCHOT 30V 200MA SSD3
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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von IPD079N06L3GBTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,94 $~~; ~~0,94 $~~

10: ~~0,80 $~~; ~~8,05 $~~

100: ~~0,62 $~~; ~~61,90 $~~

500: ~~0,55 $~~; ~~273,50 $~~

1000: ~~0,43 $~~; ~~432,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPD079N06L3GBTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes