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IXTN600N04T2

IXTN600N04T2
Mfr. #:
IXTN600N04T2
Hersteller:
Littelfuse
Beschreibung:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTN600N04T2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXTN600N04T2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Brückengleichrichter
Serie
IXTN600N04
Typ
TrenchT2 GigaMOS
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
SMD/SMT
Handelsname
HiPerFET
Paket-Koffer
SOT-227B
Pd-Verlustleistung
940 W
Ausgangsstrom
600 A
Abfallzeit
250 ns
Anstiegszeit
20 ns
Tags
IXTN6, IXTN, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 600 A 1.05 mO Chassis Mount GigaMOS TrenchT2 Mosfet - SOT-227B
***ical
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Teil # Mfg. Beschreibung Aktie Preis
IXTN600N04T2
DISTI # V99:2348_15878365		IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant		2
  • 500:$15.5400
  • 200:$16.3600
  • 100:$17.7500
  • 50:$18.3800
  • 25:$19.2500
  • 10:$20.8500
  • 5:$21.9300
  • 1:$22.7000
IXTN600N04T2
DISTI # IXTN600N04T2-ND		IXYS CorporationMOSFET N-CH 40V 600A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube		370In Stock
  • 100:$21.7771
  • 10:$25.4990
  • 1:$27.5700
IXTN600N04T2
DISTI # 27158570		IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant		26
  • 500:$16.5984
  • 200:$17.4432
  • 100:$19.0080
  • 50:$19.5744
  • 25:$20.4480
  • 10:$22.2528
  • 5:$23.3664
  • 1:$24.0576
IXTN600N04T2
DISTI # 27472446		IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant		2
  • 1:$22.7000
IXTN600N04T2
DISTI # 747-IXTN600N04T2		IXYS CorporationDiscrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		449
  • 1:$25.0600
  • 5:$24.3400
  • 10:$23.1800
  • 25:$21.3000
  • 50:$20.3900
  • 100:$19.8000
  • 200:$18.1700
IXTN600N04T2
DISTI # C1S331700073039		IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant		26
  • 25:$26.5000
  • 10:$28.7000
  • 5:$31.2000
  • 1:$38.0000
Bild Teil # Beschreibung
IXTN600N04T2

Mfr.#: IXTN600N04T2

OMO.#: OMO-IXTN600N04T2

 Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
IXTN60N50L2

Mfr.#: IXTN60N50L2

OMO.#: OMO-IXTN60N50L2

 MOSFET 60 Amps 500V
IXTN600N04T2

Mfr.#: IXTN600N04T2

OMO.#: OMO-IXTN600N04T2-IXYS-CORPORATION

 Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXTN60N50L2

Mfr.#: IXTN60N50L2

OMO.#: OMO-IXTN60N50L2-IXYS-CORPORATION

 MOSFET N-CH 500V 53A SOT-227
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von IXTN600N04T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
23,31 $
23,31 $
10
22,14 $
221,44 $
100
20,98 $
2 097,90 $
500
19,81 $
9 906,75 $
1000
18,65 $
18 648,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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