OMO ElectronicOMO Electronic
Expand menu
0 Wagen

BFP 640FESD H6327

BFP 640FESD H6327
Mfr. #:
BFP 640FESD H6327
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors RF BI
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BFP 640FESD H6327 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BFP 640FESD H6327 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
HF-Transistoren (BJT)
Serie
BFP640
Verpackung
Spule
Teil-Aliasnamen
BFP640FESDH6327XT BFP640FESDH6327XTSA1 SP000890034
Montageart
SMD/SMT
Paket-Koffer
TSFP-4-1
Technologie
SiGe
Transistor-Typ
Bipolar
Pd-Verlustleistung
200 mW
Emitter-Basis-Spannung-VEBO
4.8 V
Kontinuierlicher Kollektorstrom
50 mA
Tags
BFP640FESDH, BFP640FES, BFP640FE, BFP640F, BFP64, BFP6, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
BFPx4 RF Transistors
Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BFP640FESDH6327XTSA1
DISTI # 32628507		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant		210000
  • 3000:$0.2142
BFP640FESDH6327XTSA1
DISTI # 32628715		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant		42000
  • 3000:$0.2142
BFP640FESDH6327XTSA1
DISTI # BFP640FESDH6327XTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ 4TSFP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1973
BFP640FESDH6327XTSA1
DISTI # V36:1790_06384747		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R
RoHS: Compliant		0
    BFP640FESDH6327XTSA1
    DISTI # BFP640FESDH6327XTSA1    		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R - Bulk (Alt: BFP640FESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 1924
    Container: Bulk    		Americas - 0
    • 19240:$0.1649
    • 9620:$0.1679
    • 5772:$0.1739
    • 3848:$0.1799
    • 1924:$0.1869
    BFP640FESDH6327XTSA1
    DISTI # BFP640FESDH6327XTSA1    		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP640FESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1609
    • 18000:$0.1639
    • 12000:$0.1699
    • 6000:$0.1759
    • 3000:$0.1829
    BFP640FESDH6327XTSA1
    DISTI # SP000890034    		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin TSFP T/R (Alt: SP000890034)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1679
    • 18000:€0.1809
    • 12000:€0.1959
    • 6000:€0.2139
    • 3000:€0.2619
    BFP 640FESD H6327
    DISTI # 726-BFP640FESDH6327    		Infineon Technologies AGRF Bipolar Transistors RF BI
    RoHS: Compliant    		4378
    • 1:$0.5600
    • 10:$0.4600
    • 100:$0.2810
    • 1000:$0.2170
    • 3000:$0.1850
    BFP640FESDH6327XTSA1Infineon Technologies AGInfineon Ultra Low-Noise SiGe:C TransistorBFP640FESD
    RoHS: Not Compliant    		3000
    • 1000:$0.1700
    • 500:$0.1800
    • 100:$0.1900
    • 25:$0.2000
    • 1:$0.2100
    BFP640FESDH6327Infineon Technologies AG 2291
      BFP640FESDH6327XTSA1
      DISTI # 2480672      		Infineon Technologies AGRF TRANSISTOR, NPN, 4.1V, 46GHZ, TSFP
      RoHS: Compliant      		45
      • 3000:$0.2850
      • 1000:$0.3340
      • 100:$0.4320
      • 10:$0.7070
      • 1:$0.8610
      BFP640FESDH6327Infineon Technologies AG4.1V,50mA,Bipolar RF NPN Transistor2350
      • 1:$0.3000
      • 100:$0.2500
      • 500:$0.2200
      • 1000:$0.2200
      Bild Teil # Beschreibung
      BFP 640FESD H6327

      Mfr.#: BFP 640FESD H6327

      OMO.#: OMO-BFP-640FESD-H6327

      		 RF Bipolar Transistors RF BI
      BFP 640F H6327

      Mfr.#: BFP 640F H6327

      OMO.#: OMO-BFP-640F-H6327

      		 RF Bipolar Transistors RF BIP TRANSISTOR
      BFP 640FESD E6327

      Mfr.#: BFP 640FESD E6327

      OMO.#: OMO-BFP-640FESD-E6327

      		 RF Bipolar Transistors RF BIP TRANSISTORS
      BFP 640FESD E6327

      Mfr.#: BFP 640FESD E6327

      OMO.#: OMO-BFP-640FESD-E6327-INFINEON-TECHNOLOGIES

      		 RF TRANS NPN 4.7V 46GHZ 4TSFP
      BFP 640FESD H6327

      Mfr.#: BFP 640FESD H6327

      OMO.#: OMO-BFP-640FESD-H6327-317

      		 RF Bipolar Transistors RF BI
      BFP 640F H6327

      Mfr.#: BFP 640F H6327

      OMO.#: OMO-BFP-640F-H6327-317

      		 RF Bipolar Transistors RF BIP TRANSISTOR
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von BFP 640FESD H6327 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,28 $
      0,28 $
      10
      0,26 $
      2,64 $
      100
      0,25 $
      24,98 $
      500
      0,24 $
      117,95 $
      1000
      0,22 $
      222,00 $
      Beginnen mit
      Neueste Produkte
      • XDPL8218 Voltage Flyback IC
        XDPL8218 Voltage Flyback IC
        Infineon's XDPL8218 is a configurable single-stage SSR flyback controller with high power factor, standby power performance, and constant voltage output.
      • LMD and LMS Modular Connectors
        LMD and LMS Modular Connectors
        LMD and LMS modular connectors from Amphenol eliminate costly PC board and associated hardware therefore reducing assembly and production costs.
      • XC6216 Series Voltage Regulator
        XC6216 Series Voltage Regulator
        Torex's XC6216 series voltage regulator with a maximum output current of 150 mA and 28 V operating voltage used in a variety of consumer products.
      • TLF502x1EL Step-Down DC / DC
        TLF502x1EL Step-Down DC / DC
        Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
      • Compare BFP 640FESD H6327
        Compare BFP 640FESD H6327
        BFP640FESDR4S vs BFP640FESDH6327 vs BFP640FESDH6327XTSA1
      • 600 V CoolMOS™ P7 Power Transistors
        600 V CoolMOS™ P7 Power Transistors
        Infineon‘s 600 V CoolMOS™ P7 series SJ MOSFET in TO-247 4-pin packaging with asymmetric leads.
      More Newest Products
      Top