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BSC018NE2LSI

BSC018NE2LSI
Mfr. #:
BSC018NE2LSI
Hersteller:
Infineon Technologies
Beschreibung:
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC018NE2LSI Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Einzeln
Serie
OptiMOS
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
BSC018NE2LSIATMA1 BSC018NE2LSIXT SP000906030
Paket-Koffer
8-PowerTDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PG-TDSON-8
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
69W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
25V
Eingangskapazität-Ciss-Vds
2500pF @ 12V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
29A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
1.8 mOhm @ 30A, 10V
Vgs-th-Max-Id
2V @ 250μA
Gate-Lade-Qg-Vgs
36nC @ 10V
Transistor-Polarität
N-Kanal
Tags
BSC018NE2LSI, BSC018NE2LS, BSC018NE, BSC018, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5852
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSI		Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP (Alt: BSC018NE2LSI)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    BSC018NE2LSIATMA1
    DISTI # BSC018NE2LSIATMA1    		Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018NE2LSIATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.4609
    • 10000:$0.4439
    • 20000:$0.4279
    • 30000:$0.4129
    • 50000:$0.4059
    BSC018NE2LSIATMA1
    DISTI # 34AC1374    		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes4867
    • 1:$1.5900
    • 10:$1.4100
    • 25:$1.3100
    • 50:$1.2100
    • 100:$1.1100
    • 250:$0.9860
    • 500:$0.8610
    • 1000:$0.6790
    BSC018NE2LSIInfineon Technologies AGPower Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		4415
    • 1000:$0.5300
    • 500:$0.5500
    • 100:$0.5800
    • 25:$0.6000
    • 1:$0.6500
    BSC018NE2LSI
    DISTI # 726-BSC018NE2LSI    		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    RoHS: Compliant    		987
    • 1:$1.3200
    • 10:$1.1200
    • 100:$0.8610
    • 500:$0.7610
    • 1000:$0.6000
    BSC018NE2LSIXT
    DISTI # 726-BSC018NE2LSIATMA    		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    RoHS: Compliant    		0
    • 5000:$0.5320
    BSC018NE2LSIInfineon Technologies AG 8481
      BSC018NE2LSIATMA1
      DISTI # BSC018NE2LSIATMA1      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-85048
      • 1:$0.3800
      • 5:$0.3440
      • 25:$0.3332
      BSC018NE2LSIATMA1
      DISTI # 2781051      		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
      RoHS: Compliant      		4877
      • 5:£1.1700
      • 25:£1.0600
      • 100:£0.8410
      • 250:£0.7470
      • 500:£0.6520
      BSC018NE2LSIATMA1
      DISTI # 2781051      		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
      RoHS: Compliant      		4867
      • 5:$1.7000
      • 25:$1.4800
      • 100:$1.2100
      • 250:$1.0200
      • 500:$0.8810
      • 1000:$0.8330
      • 5000:$0.7900
      Bild Teil # Beschreibung
      BSC018NE2LSI

      Mfr.#: BSC018NE2LSI

      OMO.#: OMO-BSC018NE2LSI

      		 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
      BSC018NE2LSIXT

      Mfr.#: BSC018NE2LSIXT

      OMO.#: OMO-BSC018NE2LSIXT

      		 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
      BSC018N04LSGXT

      Mfr.#: BSC018N04LSGXT

      OMO.#: OMO-BSC018N04LSGXT

      		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
      BSC018N04LSGXT

      Mfr.#: BSC018N04LSGXT

      OMO.#: OMO-BSC018N04LSGXT-1190

      		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
      BSC018N04LSG-S

      Mfr.#: BSC018N04LSG-S

      OMO.#: OMO-BSC018N04LSG-S-1190

      		 Neu und Original
      BSC018NE2L

      Mfr.#: BSC018NE2L

      OMO.#: OMO-BSC018NE2L-1190

      		 Neu und Original
      BSC018NE2LSI BSC018NE2LS

      Mfr.#: BSC018NE2LSI BSC018NE2LS

      OMO.#: OMO-BSC018NE2LSI-BSC018NE2LS-1190

      		 Neu und Original
      BSC018NE2LSI QFN8

      Mfr.#: BSC018NE2LSI QFN8

      OMO.#: OMO-BSC018NE2LSI-QFN8-1190

      		 Neu und Original
      BSC018N04LSGATMA1

      Mfr.#: BSC018N04LSGATMA1

      OMO.#: OMO-BSC018N04LSGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 40V 100A TDSON-8
      BSC018NE2LSIATMA1

      Mfr.#: BSC018NE2LSIATMA1

      OMO.#: OMO-BSC018NE2LSIATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 29A TDSON-8
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von BSC018NE2LSI dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,80 $
      0,80 $
      10
      0,76 $
      7,55 $
      100
      0,72 $
      71,55 $
      500
      0,68 $
      337,90 $
      1000
      0,64 $
      636,00 $
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