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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI8802DB-T2-E1 DISTI # V72:2272_09216581 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant | 2974 |
|
| SI8802DB-T2-E1 DISTI # V36:1790_09216581 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant | 0 |
|
| SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1CT-ND | Vishay Siliconix | MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 694In Stock |
|
| SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1DKR-ND | Vishay Siliconix | MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 694In Stock |
|
| SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1TR-ND | Vishay Siliconix | MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
|
| SI8802DB-T2-E1 DISTI # 30883628 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant | 2974 |
|
| SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1 | Vishay Intertechnologies | Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8802DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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| SI8802DB-T2-E1 DISTI # 99W9639 | Vishay Intertechnologies | MOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mVRoHS Compliant: Yes | 0 |
|
| SI8802DB-T2-E1 DISTI # 04X9769 | Vishay Intertechnologies | MOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV RoHS Compliant: Yes | 0 |
|
| SI8802DB-T2-E1 DISTI # 781-SI8802DB-T2-E1 | Vishay Intertechnologies | MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant | 4261 |
|
| SI8802DB-T2-E1 DISTI # 1807328 | Vishay Intertechnologies | N-CH MOSFET MFOOT 1X18V 80MOHM @ 4.5V, RL | 3000 |
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| SI8802DBT2E1 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SI8802DB-T2-E1 | Vishay Intertechnologies | MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant | Americas - |
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| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI8802DB-T2-E1 OMO.#: OMO-SI8802DB-T2-E1 |
MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 |
|
Mfr.#: SI8802DB-T2-E1-CUT TAPE |
Neu und Original |
|
Mfr.#: SI8802DB-T2-E1 OMO.#: OMO-SI8802DB-T2-E1-VISHAY |
MOSFET N-CH 8V MICROFOOT |
|
|
Mfr.#: SI8802DB-T2-EY OMO.#: OMO-SI8802DB-T2-EY-1190 |
Neu und Original |
|
|
Mfr.#: SI8802DBT2E1 OMO.#: OMO-SI8802DBT2E1-1190 |
Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |