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SIHP33N60EF-GE3

SIHP33N60EF-GE3
Mfr. #:
SIHP33N60EF-GE3
Hersteller:
Vishay
Beschreibung:
Darlington Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP33N60EF-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHP33N60EF-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHP33, SIHP3, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N-CH 650V 33A EF Series Power MOSFET with Fast Body Diode in TO-220
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB
***et
Trans MOSFET N-CH 600V 33A 3-Pin TO-220AB
***Components
MOSFET 600V 33A W/FAST DIODE TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 33A, TO-220AB-3
***i-Key
MOSFET N-CH 600V 33A TO-220-3
***C
MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
***et Europe
MOS Power Transistors HV (>= 200V)
***
N-CH 600V T0-220
***nell
MOSFET, CANALE N, 600V, 33A, TO-220AB-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:33A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.085ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Teil # Mfg. Beschreibung Aktie Preis
SIHP33N60EF-GE3
DISTI # SIHP33N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$3.7868
  • 500:$4.3478
  • 100:$5.1893
  • 10:$6.3110
  • 1:$7.0100
SIHP33N60EF-GE3
DISTI # SIHP33N60EF-GE3		Vishay IntertechnologiesMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: SIHP33N60EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.6900
  • 2000:$3.5900
  • 4000:$3.3900
  • 6000:$3.2900
  • 10000:$3.1900
SIHP33N60EF-GE3
DISTI # 31Y6763		Vishay IntertechnologiesMOS Power Transistors HV (>= 200V) - Bulk (Alt: 31Y6763)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$6.3800
  • 10:$5.7400
  • 25:$5.4900
  • 50:$5.2300
  • 100:$4.7200
  • 250:$4.3400
  • 500:$3.9600
SIHP33N60EF-GE3
DISTI # 31Y6763		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes39
  • 1:$6.3800
  • 10:$5.7400
  • 25:$5.4900
  • 50:$5.2300
  • 100:$4.7200
  • 250:$4.3400
  • 500:$3.9600
SIHP33N60EF-GE3
DISTI # 78-SIHP33N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		1273
  • 1:$6.3800
  • 10:$5.7400
  • 50:$5.2300
  • 100:$4.7200
  • 250:$4.3400
  • 500:$3.9600
SIHP33N60EF-GE3Vishay Siliconix 500
    SIHP33N60EF-GE3
    DISTI # 9034487P    		Vishay IntertechnologiesMOSFET 600V 33A W/FAST DIODE TO-220AB, TU20
    • 2:£5.0550
    SIHP33N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		Americas -
      Bild Teil # Beschreibung
      SIHP33N60E-GE3

      Mfr.#: SIHP33N60E-GE3

      OMO.#: OMO-SIHP33N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220AB
      SIHP33N60EF-GE3

      Mfr.#: SIHP33N60EF-GE3

      OMO.#: OMO-SIHP33N60EF-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220AB
      SIHP33N60EF-GE3

      Mfr.#: SIHP33N60EF-GE3

      OMO.#: OMO-SIHP33N60EF-GE3-VISHAY

      		 Darlington Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
      SIHP33N60E

      Mfr.#: SIHP33N60E

      OMO.#: OMO-SIHP33N60E-1190

      		 Neu und Original
      SIHP33N60E-GE3

      Mfr.#: SIHP33N60E-GE3

      OMO.#: OMO-SIHP33N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 33A TO-220AB
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von SIHP33N60EF-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,40 $
      0,40 $
      10
      0,38 $
      3,76 $
      100
      0,36 $
      35,64 $
      500
      0,34 $
      168,30 $
      1000
      0,32 $
      316,80 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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