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FDMS3606S

FDMS3606S
Mfr. #:
FDMS3606S
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET DUAL N-CH. ER TRENCH MO
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS3606S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Aufbau:
Dual
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
6 mm
Serie:
FDMS3606S
Transistortyp:
2 N-Channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.006032 oz
Tags
FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 11/2.8 mOhm 29/83 nC 2.2/2.5 W Mosfet - POWER 56-8
***r Electronics
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***ure Electronics
FDMS7692 Series 30 V 14 A 7.5 mOhm N-Ch PowerTrench® MOSFET - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 30V, 7.5mΩ
***nell
MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:27W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***ical
Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 30V 30A TO252-3
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***S
new, original packaged
***el Nordic
Contact for details
***Yang
Transistor MOSFET Array Dual N-CH 30V 54A/123A 8-Pin Power 56 T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 11/4 mOhm 14/18 nC 2.2/2.5 W PowerTrench Mosfet - POWER 56-8
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 13 A 8 mOhm 1 W Mosfet - POWER 56-8
***ical
Trans MOSFET N-CH 30V 13A/23A T/R
***ark
TAPE REEL/DUAL N-Channel Power Trench MOSFET
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 30V, 0.0068ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
MOSFET DUAL N-CH. ER TRENCH MO
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***ure Electronics
Single N-Channel 30 V 0.006 Ohms Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 20.7A 8-Pin PowerPAK SO EP T/R
***SIT Distribution GmbH
Power Field-Effect Transistor, 20.7A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronics
MOSFET 30V 35A 36W 6.0mohm @ 10V
***mal
N-Ch PowerPAK SO-8 BWL 30V 6mohm@10V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.048ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:20V; Power Dissipation, Pd:4.2W ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 30 V 0.0079 Ohm 41.7 W SMT Power Mosfet - PowerPAK-SO-8
***et Japan
Transistor MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:41.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Teil # Mfg. Beschreibung Aktie Preis
FDMS3606S
DISTI # FDMS3606SCT-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMS3606S
    DISTI # FDMS3606SDKR-ND    		ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMS3606S
      DISTI # FDMS3606STR-ND      		ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.7084
      FDMS3606S
      DISTI # FDMS3606S      		ON SemiconductorTrans MOSFET N-CH 30V 13A/27A 8-Pin PQFN T/R (Alt: FDMS3606S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Asia - 3000
      • 3000:$0.8501
      • 6000:$0.8174
      • 9000:$0.7871
      • 15000:$0.7590
      • 30000:$0.7328
      • 75000:$0.7084
      • 150000:$0.6968
      FDMS3606S
      DISTI # FDMS3606S      		ON SemiconductorTrans MOSFET N-CH 30V 13A/27A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3606S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$0.7839
      • 6000:$0.7789
      • 12000:$0.7689
      • 18000:$0.7589
      • 30000:$0.7399
      FDMS3606S
      DISTI # 68X0377      		ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
      • 1:$0.9200
      FDMS3606SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
      RoHS: Compliant      		150000
      • 1000:$0.8800
      • 500:$0.9300
      • 100:$0.9700
      • 25:$1.0100
      • 1:$1.0900
      FDMS3606S
      DISTI # 512-FDMS3606S      		ON SemiconductorMOSFET DUAL N-CH. ER TRENCH MO
      RoHS: Compliant      		2975
      • 1:$1.5100
      • 10:$1.2800
      • 100:$0.9900
      • 500:$0.8750
      • 1000:$0.6900
      Bild Teil # Beschreibung
      FDMS1D5N03

      Mfr.#: FDMS1D5N03

      OMO.#: OMO-FDMS1D5N03

      		 MOSFET PT9 30V/12V Nch PowerTrench SyncFET
      FDMS3600AS

      Mfr.#: FDMS3600AS

      OMO.#: OMO-FDMS3600AS

      		 MOSFET DUAL N-CH. ER TRENCH MO
      FDMS3624S

      Mfr.#: FDMS3624S

      OMO.#: OMO-FDMS3624S

      		 MOSFET 25V PowerTrench Power Stage
      FDMS8320LDC

      Mfr.#: FDMS8320LDC

      OMO.#: OMO-FDMS8320LDC

      		 MOSFET 40V 130A Dual Cool PowerTrench MOSFET
      FDMS8350L

      Mfr.#: FDMS8350L

      OMO.#: OMO-FDMS8350L

      		 MOSFET FET 40V 0.85 MOHM PQFN56
      FDMS86322

      Mfr.#: FDMS86322

      OMO.#: OMO-FDMS86322

      		 MOSFET 80V N-Channel PowerTrench MOSFET
      FDMS003N08C

      Mfr.#: FDMS003N08C

      OMO.#: OMO-FDMS003N08C

      		 MOSFET FET 80V 147A 3.1 mOhm
      FDMS36101L

      Mfr.#: FDMS36101L

      OMO.#: OMO-FDMS36101L-1190

      		 - Bulk (Alt: FDMS36101L)
      FDMS86101_F065

      Mfr.#: FDMS86101_F065

      OMO.#: OMO-FDMS86101-F065-1190

      		 Neu und Original
      FDMS86368-F085

      Mfr.#: FDMS86368-F085

      OMO.#: OMO-FDMS86368-F085-ON-SEMICONDUCTOR

      		 MOSFET N-CH 80V 80A POWER56
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von FDMS3606S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,32 $
      1,32 $
      10
      1,13 $
      11,30 $
      100
      0,87 $
      86,80 $
      500
      0,77 $
      383,50 $
      1000
      0,60 $
      605,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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