ZXMS6005DT8TA

Mfr. #:: ZXMS6005DT8TA
Hersteller:: Diodes Incorporated
Beschreibung:: MOSFET 60V N-Ch Intellifet 200mohm 1.8A 210mJ
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: ZXMS6005DT8TA Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: ZXMS6005DT8TA Datasheet ZXMS6005DT8TA Datasheet (P4-P6)ZXMS6005DT8TA Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:: ZXMS6005DT8TA Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Eingebaute Dioden

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SM-8

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 1.8 A

Rds On - Drain-Source-Widerstand:: 150 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 700 mV

Vgs - Gate-Source-Spannung:: 5 V

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 125 C

Pd - Verlustleistung:: 2.13 W

Aufbau:: Dual

Kanalmodus:: Erweiterung

Handelsname:: IntelliFET

Verpackung:: Spule

Produkt:: MOSFET Kleinsignal

Serie:: ZXMS600

Transistortyp:: 2 N-Channel

Marke:: Eingebaute Dioden

Abfallzeit:: 19 us, 19 us

Produktart:: MOSFET

Anstiegszeit:: 14 us, 14 us

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 34 us, 34 us

Typische Einschaltverzögerungszeit:: 6 us, 6 us

Tags: ZXMS6005D, ZXMS6005, ZXMS6, ZXMS, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMS6005DT8TA Beschreibung

***ure Electronics: Dual N-Channel 60 V 250 mOhm 2.13 mW Silicon Surface Mount Mosfet - SM-8

***ical: Self Protected Enhancement Mode Intellifet MOSFET

***p One Stop Global: Self Protected Low Side MOSFET 8-Pin SM T/R

***ied Electronics & Automation: MOSFET IntelliFET N-Ch 60V 1.8A 0.5R SM8

***ronik: 2xLSS 200mOhm 60V SM-8 SMD

***i-Key: IC PWR DRIVER N-CHANNEL 1:1 SM8

***ark: Mosfet, Nn Channel, W Esd, 60V, 1.8A, Sm8; Transistor Polarity:dual N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.15Ohm; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, NN CH, W ESD, 60V, 1.8A, SM8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.16W; Transistor Case Style:SOT-223; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (15-Jan-2019); Continuous Drain Current Id, N Channel:5A; Drain Source Voltage Vds, N Channel:60V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.17ohm; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +150°C

***nell: MOSFET, CH NN, ESD, 60V, 1.8A, SM8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:1.8A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.15ohm; Tensione Vgs di Misura Rds(on):5V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:1.16W; Modello Case Transistor:SOT-223; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (15-Jan-2019); Configurazione Modulo:Doppio; Corrente Continua di Drain Id, Canale N:5A; Intervallo Temperatura di Esercizio:Da -40°C a +150°C; Resistenza di Attivazione Rds(on), Canale N:0.17ohm; Temperatura di Esercizio Min:-40°C; Tensione Drain Source Vds, Canale N:60V

ZXMS6005DT8TA Mehr Informationen

IntelliFET Self-Protected MOSFETs: Diodes Inc. IntelliFET Self-Protected MOSFETs integrate a power MOSFET with a complete array of protection circuits. These protections guard against ESD, over-current, over-voltage and over-temperature conditions. Intelligent MOSFETs sense potentially catastrophic conditions and protects themselves and the connected loads. These protection functions improve overall system reliability. Additional features like status flags provide diagnostic capabilities that aid isolation and rectification faults within a vehicle.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
ZXMS6005DT8TA DISTI # V72:2272_06708167	Zetex / Diodes Inc	Self Protected Low Side MOSFET Automotive 8-Pin SM T/R RoHS: Compliant	661	500:$1.1507 250:$1.3165 100:$1.3304 25:$1.6088 10:$1.6805 1:$1.9813
ZXMS6005DT8TA DISTI # ZXMS6005DT8TADI-ND	Diodes Incorporated	MOSFET N CH 60V 1.6A (Ta) SM8 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.1165
ZXMS6005DT8TA DISTI # 25757573	Zetex / Diodes Inc	Self Protected Low Side MOSFET Automotive 8-Pin SM T/R RoHS: Compliant	661	500:$1.1507 250:$1.3165 100:$1.3304 25:$1.6088 10:$1.6805 8:$1.9813
ZXMS6005DT8TA DISTI # ZXMS6005DT8TA	Diodes Incorporated	Self Protected Low Side MOSFET 8-Pin SM T/R - Tape and Reel (Alt: ZXMS6005DT8TA) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.0549 2000:$1.0039 4000:$0.9569 6000:$0.9129 10000:$0.8939
ZXMS6005DT8TA DISTI # 55T7439	Diodes Incorporated	MOSFET, NN CHANNEL, W ESD, 60V, 1.8A, SM8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	1791	1:$2.0600 10:$1.7500 25:$1.6300 50:$1.5200 100:$1.4000 250:$1.3200 500:$1.2300 1000:$1.0200
ZXMS6005DT8TA DISTI # 70438880	Diodes Incorporated	MOSFET IntelliFET N-Ch 60V 1.8A 0.5R SM8 RoHS: Compliant	0	25:$1.6700 50:$1.4700 125:$1.3100 250:$1.2200
ZXMS6005DT8TA DISTI # 522-ZXMS6005DT8TA	Diodes Incorporated	MOSFET 60V N-Ch Intellifet 200mohm 1.8A 210mJ RoHS: Compliant	1055	1:$2.0600 10:$1.7500 100:$1.4000 500:$1.2300 1000:$1.0200
ZXMS6005DT8TA DISTI # 1902497	Diodes Incorporated	MOSFET, NN CH, W ESD, 60V, 1.8A, SM8 RoHS: Compliant	1791	1:$3.2600 10:$2.7800 100:$2.2200 500:$1.9500 1000:$1.6300
ZXMS6005DT8TA DISTI # C1S205700143936	Diodes Incorporated	Self Protected Enhancement Mode Intellifet MOSFET RoHS: Compliant	661	250:$1.3165 100:$1.3304 25:$1.6088 10:$1.6805
ZXMS6005DT8TA DISTI # 1902497	Diodes Incorporated	MOSFET, NN CH, W ESD, 60V, 1.8A, SM8 RoHS: Compliant	1816	5:£1.5000 25:£1.3100 100:£1.0500 250:£0.9880 500:£0.9230

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von ZXMS6005DT8TA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,06 $~~; ~~2,06 $~~

10: ~~1,75 $~~; ~~17,50 $~~

100: ~~1,40 $~~; ~~140,00 $~~

500: ~~1,22 $~~; ~~610,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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ZXMS6005DT8TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes