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IPL65R190E6AUMA1

IPL65R190E6AUMA1
Mfr. #:
IPL65R190E6AUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 20.2A VSON-4
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPL65R190E6AUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSON-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
20.2 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
73 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
151 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
8 mm
Serie:
CoolMOS E6
Transistortyp:
1 N-Channel
Breite:
8 mm
Marke:
Infineon-Technologien
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
112 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
IPL65R190E6AUMA1 SP001074938
Tags
IPL65R19, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 20.2A 5-Pin Thin-PAK T/R
***ineon SCT
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-VSON-4, RoHS
***ineon
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPL65R190E6AUMA1
DISTI # IPL65R190E6AUMA1-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPL65R190E6AUMA1
    DISTI # 726-IPL65R190E6AUMA1    		Infineon Technologies AGMOSFET N-Ch 650V 20.2A VSON-4
    RoHS: Compliant    		0
      IPL65R190E6AUMA1
      DISTI # 8977551P      		Infineon Technologies AGMOSFET N-CH 650V 12.8A COOLMOSE6 VSON4, RL2995
      • 25:£1.6400
      • 100:£1.4340
      • 250:£1.3420
      • 500:£1.2800
      Bild Teil # Beschreibung
      IPL65R195C7AUMA1

      Mfr.#: IPL65R195C7AUMA1

      OMO.#: OMO-IPL65R195C7AUMA1

      		 MOSFET HIGH POWER BEST IN CLASS
      IPL65R190E6AUMA1

      Mfr.#: IPL65R190E6AUMA1

      OMO.#: OMO-IPL65R190E6AUMA1

      		 MOSFET N-Ch 650V 20.2A VSON-4
      IPL65R190E6

      Mfr.#: IPL65R190E6

      OMO.#: OMO-IPL65R190E6-1190

      		 Infineon HIGH POWER_LEGACY
      IPL65R195C7

      Mfr.#: IPL65R195C7

      OMO.#: OMO-IPL65R195C7-1190

      		 MOSFET HIGH POWER BEST IN CLASS
      IPL65R195C7AUMA1

      Mfr.#: IPL65R195C7AUMA1

      OMO.#: OMO-IPL65R195C7AUMA1-INFINEON-TECHNOLOGIES

      		 MOSFET HIGH POWER BEST IN CLASS
      IPL65R190E6AUMA1

      Mfr.#: IPL65R190E6AUMA1

      OMO.#: OMO-IPL65R190E6AUMA1-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von IPL65R190E6AUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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