IPL65R190E6AUMA1

IPL65R190E6AUMA1
Mfr. #:
IPL65R190E6AUMA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPL65R190E6AUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
IPL65R190E6 SP001074938
Montageart
SMD/SMT
Paket-Koffer
VSON-4
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
151 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Abfallzeit
10 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
20.2 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Widerstand
190 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
112 ns
Typische-Einschaltverzögerungszeit
12 ns
Qg-Gate-Ladung
73 nC
Kanal-Modus
Erweiterung
Tags
IPL65R19, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPL65R190E6AUMA1
DISTI # IPL65R190E6AUMA1-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPL65R190E6AUMA1
    DISTI # 726-IPL65R190E6AUMA1
    Infineon Technologies AGMOSFET N-Ch 650V 20.2A VSON-4
    RoHS: Compliant
    0
      IPL65R190E6AUMA1
      DISTI # 8977551P
      Infineon Technologies AGMOSFET N-CH 650V 12.8A COOLMOSE6 VSON4, RL2995
      • 25:£1.6400
      • 100:£1.4340
      • 250:£1.3420
      • 500:£1.2800
      Bild Teil # Beschreibung
      IPL65R195C7AUMA1

      Mfr.#: IPL65R195C7AUMA1

      OMO.#: OMO-IPL65R195C7AUMA1

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R190E6AUMA1

      Mfr.#: IPL65R190E6AUMA1

      OMO.#: OMO-IPL65R190E6AUMA1

      MOSFET N-Ch 650V 20.2A VSON-4
      IPL65R190E6

      Mfr.#: IPL65R190E6

      OMO.#: OMO-IPL65R190E6-1190

      Infineon HIGH POWER_LEGACY
      IPL65R195C7

      Mfr.#: IPL65R195C7

      OMO.#: OMO-IPL65R195C7-1190

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R195C7AUMA1

      Mfr.#: IPL65R195C7AUMA1

      OMO.#: OMO-IPL65R195C7AUMA1-INFINEON-TECHNOLOGIES

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R190E6AUMA1

      Mfr.#: IPL65R190E6AUMA1

      OMO.#: OMO-IPL65R190E6AUMA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IPL65R190E6AUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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