SIA437DJ-T1-GE3

SIA437DJ-T1-GE3
Mfr. #:
SIA437DJ-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -20V Vds 8V Vgs PowerPAK SC-70
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA437DJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA437DJ-T1-GE3 DatasheetSIA437DJ-T1-GE3 Datasheet (P4-P6)SIA437DJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIA437DJ-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SC70-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
29.7 A
Rds On - Drain-Source-Widerstand:
12 mOhms
Vgs th - Gate-Source-Schwellenspannung:
900 mV
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
90 nC
Minimale Betriebstemperatur:
- 50 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
19 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
2.05 mm
Serie:
SIA
Transistortyp:
1 P-Channel
Breite:
2.05 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
32 S
Abfallzeit:
37 ns
Produktart:
MOSFET
Anstiegszeit:
22 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
100 ns
Typische Einschaltverzögerungszeit:
20 ns
Tags
SIA43, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R
***ark
Single P-Ch Ppak Sc70 1G 20V 14.5Mohm @ 4.5V Rohs Compliant: No
***ure Electronics
P-Channel 20V 29.7A 3.5W , 19W Surface Mount Mosfet
***nell
MOSFET, P-CH, 20V, 29.7A, POWERPAKSC70-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-29.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:19W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited
***nsix Microsemi
Power Field-Effect Transistor, 29.7A I(D), 20V, 0.0145ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
MOSFET 20V [email protected] 16A P-Ch
***or
MOSFET P-CH 20V 29.7A PPAK SC70
***ronik
P-CHAN.FET 29,7A 20V PP-SC70-6
***enic
PowerPAK SC-70-6L MOSFETs ROHS
***ure Electronics
Single P-Channel 20 V 0.0155 O 90 nC Surface Mount Mosfet - SOIC-8
***icontronic
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***i-Key
MOSFET N-CH 20V 10.5A 8-SOIC
***Yang
MOSFET Single N-Ch FET Enhancement Mode - Bulk
***S
French Electronic Distributor since 1988
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:10.5A; On Resistance, Rds(on):0.0135ohm; Rds(on) Test Voltage, Vgs:4.5V; Drain-Source Breakdown Voltage:20V RoHS Compliant: Yes
***(Formerly Allied Electronics)
SIA429DJT-T1-GE3 P-channel MOSFET Transistor; 8.5 A; 20 V; 6-Pin PowerPAK SC-70
***et
Trans MOSFET P-CH 20V 10.6A 6-Pin PowerPAK SC-70 T/R
***enic
20V 12A 3.5W 20.5m´Î@4.5V6A 1V@250Ã×A P Channel PowerPAK SC-70-6 MOSFETs ROHS
***ark
Mosfet, P-Ch, -20V, Powerpak Sc70-6, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.017Ohm; Transistor Mounting:surface Mount; Power Dissipation Pd:19Wrohs Compliant: No
***ical
Trans MOSFET N-CH 20V 10.5A Automotive 6-Pin DFN EP T/R
***(Formerly Allied Electronics)
MOSFET,N Channel,Trans,20V 10.5A DFN6 EP | Diodes Inc DMN2013UFDE-7
***des Inc SCT
N-Channel Mosfet, 20V VDS, 8±V VGS
***ark
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.1V; Power Dissipation:660Mw; No. Of Pins:6Pinsrohs Compliant: No |Diodes Inc. DMN2013UFDE-7.
***emi
Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20V, 9.4A, 14.5mΩ
***ure Electronics
Single N-Channel 20 V 1.9 W 17.5 nC Silicon Surface Mount Mosfet - MICROFET-2x2
***rchild Semiconductor
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
***emi
20V Single N-Channel 1.5 V Specified PowerTrench® MOSFET
***et
Trans MOSFET N-CH 20V 9.4A 6-Pin MicroFET T/R
***S
French Electronic Distributor since 1988
***rchild Semiconductor
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SIA437DJ-T1-GE3
DISTI # V72:2272_09216176
Vishay IntertechnologiesTrans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
477
  • 250:$0.3793
  • 100:$0.4214
  • 25:$0.4983
  • 10:$0.6090
  • 1:$0.7492
SIA437DJ-T1-GE3
DISTI # V36:1790_09216176
Vishay IntertechnologiesTrans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
0
  • 3000:$0.2393
SIA437DJ-T1-GE3
DISTI # SIA437DJ-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 29.7A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
32305In Stock
  • 1000:$0.3037
  • 500:$0.3796
  • 100:$0.4802
  • 10:$0.6260
  • 1:$0.7100
SIA437DJ-T1-GE3
DISTI # SIA437DJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 29.7A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
32305In Stock
  • 1000:$0.3037
  • 500:$0.3796
  • 100:$0.4802
  • 10:$0.6260
  • 1:$0.7100
SIA437DJ-T1-GE3
DISTI # SIA437DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 29.7A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
30000In Stock
  • 30000:$0.2334
  • 15000:$0.2396
  • 6000:$0.2488
  • 3000:$0.2672
SIA437DJ-T1-GE3
DISTI # 32360100
Vishay IntertechnologiesTrans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
477
  • 29:$0.7492
SIA437DJ-T1-GE3
DISTI # SIA437DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R (Alt: SIA437DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 6000
  • 30000:€0.2709
  • 18000:€0.2919
  • 12000:€0.3159
  • 6000:€0.3669
  • 3000:€0.5379
SIA437DJ-T1-GE3
DISTI # SIA437DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA437DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 6000
  • 30000:$0.2250
  • 18000:$0.2312
  • 12000:$0.2378
  • 6000:$0.2479
  • 3000:$0.2555
SIA437DJ-T1-GE3
DISTI # 70AC6473
Vishay IntertechnologiesTrans MOSFET P-CH 20V 12.6A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 70AC6473)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1000:$0.2940
  • 500:$0.3510
  • 250:$0.3880
  • 100:$0.4250
  • 50:$0.4930
  • 25:$0.5600
  • 1:$0.7000
SIA437DJ-T1-GE3
DISTI # 70AC6473
Vishay IntertechnologiesMOSFET, P-CH, -20V, -29.7A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-29.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV RoHS Compliant: Yes3000
  • 1:$0.2070
  • 25:$0.2070
  • 50:$0.2070
  • 100:$0.2070
  • 250:$0.2070
  • 500:$0.2070
SIA437DJ-T1-GE3.
DISTI # 81AC9905
Vishay IntertechnologiesSINGLE P-CH PPAK SC70 1G 20V 14.5MOHM @ 4.5V ROHS COMPLIANT: NO6000
  • 30000:$0.2250
  • 18000:$0.2320
  • 12000:$0.2380
  • 6000:$0.2480
  • 1:$0.2560
SIA437DJ-T1-GE3
DISTI # 78-SIA437DJ-T1-GE3
Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant
11362
  • 1:$0.6900
  • 10:$0.5590
  • 100:$0.4240
  • 500:$0.3510
  • 1000:$0.2800
  • 3000:$0.2540
  • 6000:$0.2360
  • 9000:$0.2280
  • 24000:$0.2190
SIA437DJ-T1-GE3
DISTI # 1807334
Vishay IntertechnologiesSINGLE P-CH PPAK SC70 1G 20V 14.5MOHM @, RL3000
  • 6000:£0.2050
  • 3000:£0.2220
SIA437DJ-T1-GE3
DISTI # TMOSS6674
Vishay IntertechnologiesP-CHAN.FET 29,7A 20V PP-SC70-6
RoHS: Compliant
Stock DE - 48000Stock HK - 0Stock US - 0
  • 3000:$0.2910
SIA437DJ-T1-GE3
DISTI # 2364068
Vishay IntertechnologiesMOSFET, P-CH, 20V, 29.7A, POWERPAKSC70-618625
  • 500:£0.2550
  • 250:£0.2810
  • 100:£0.3080
  • 25:£0.4230
  • 5:£0.4820
SIA437DJ-T1-GE3
DISTI # 2364068
Vishay IntertechnologiesMOSFET, P-CH, 20V, 29.7A, POWERPAKSC70-6
RoHS: Compliant
20550
  • 3000:$0.5190
  • 500:$0.5290
  • 100:$0.6400
  • 10:$0.8440
  • 1:$1.0400
SIA437DJ-T1-GE3
DISTI # XSKDRABV0047765
Vishay IntertechnologiesRectifierDiode,Schottky,1Phase,1Element,4A,30VV(RRM),Silicon,DO-214AA
RoHS: Compliant
9000 in Stock0 on Order
  • 9000:$0.3707
  • 3000:$0.3971
SIA437DJ-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant
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    MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K
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    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 2.2uF 10volts *Derate Voltage/Temp
    CC0603KRX7R9BB104

    Mfr.#: CC0603KRX7R9BB104

    OMO.#: OMO-CC0603KRX7R9BB104

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
    APFA2507LQBDSEEZGKC

    Mfr.#: APFA2507LQBDSEEZGKC

    OMO.#: OMO-APFA2507LQBDSEEZGKC

    Standard LEDs - SMD 2.5x0.7MM LOW CU RGB SMD
    BMP388

    Mfr.#: BMP388

    OMO.#: OMO-BMP388

    Board Mount Pressure Sensors MEMS Absolute Barometric Pressure Sensor
    BMP388

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    OMO.#: OMO-BMP388-BOSCH-SENSORTEC

    SENSOR PRESSURE ABS
    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von SIA437DJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,69 $
    0,69 $
    10
    0,56 $
    5,59 $
    100
    0,42 $
    42,40 $
    500
    0,35 $
    175,50 $
    1000
    0,28 $
    280,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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