AS4C32M16D3L-12BINTR

Mfr. #:: AS4C32M16D3L-12BINTR
Hersteller:: Alliance Memory
Beschreibung:: DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: AS4C32M16D3L-12BINTR Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: AS4C32M16D3L-12BINTR Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Allianzgedächtnis

Produktkategorie:: DRAM

RoHS:: Y

Typ:: SDRAM - DDR3L

Datenbusbreite:: 16 bit

Organisation:: 32 M x 16

Speichergröße:: 512 Mbit

Maximale Taktfrequenz:: 800 MHz

Versorgungsspannung - Max.:: 1.35 V

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 95 C

Serie:: AS4C32M16D3L

Verpackung:: Spule

Marke:: Allianzgedächtnis

Montageart:: SMD/SMT

Feuchtigkeitsempfindlich:: ja

Produktart:: DRAM

Werkspackungsmenge:: 2000

Unterkategorie:: Speicher & Datenspeicherung

Tags: AS4C32M16D3L, AS4C32M16D3, AS4C32M16D, AS4C32M1, AS4C3, AS4C, AS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AS4C32M16D3L-12BINTR Beschreibung

***et Europe: DRAM Chip DDR3 SDRAM 512Mbit 32M x 16 96-Pin FBGA T/R

***i-Key: IC DRAM 512M PARALLEL 96FBGA

AS4C32M16D3L-12BINTR Mehr Informationen

DDR3L SDRAM: Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
AS4C32M16D3L-12BINTR DISTI # AS4C32M16D3L-12BINTR-ND	Alliance Memory Inc	IC DRAM 512M PARALLEL 96FBGA RoHS: Not compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$2.9730
AS4C32M16D3L-12BINTR DISTI # AS4C32M16D3L-12BINTR	Alliance Memory Inc	DRAM Chip DDR3 SDRAM 512Mbit 32M x 16 96-Pin FBGA T/R - Tape and Reel (Alt: AS4C32M16D3L-12BINTR) Min Qty: 2000 Container: Reel	Americas - 0	20000:$2.1900 12000:$2.2900 8000:$2.3900 2000:$2.4900 4000:$2.4900
AS4C32M16D3L-12BIN DISTI # 913-A4C32M16D3L12BIN	Alliance Memory Inc	DRAM 512M 1.35V 800Mhz 32M x 16 DDR3 RoHS: Compliant	380	1:$4.2500 10:$3.8600 25:$3.7700 50:$3.7500 100:$3.3700 250:$3.3500 500:$3.2300 1000:$2.9300 2000:$2.7900
AS4C32M16D3L-12BINTR DISTI # 913-4C32M16D3L12BINT	Alliance Memory Inc	DRAM 512M 1.35V 800Mhz 32M x 16 DDR3 RoHS: Compliant	0	2000:$2.8700

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: AS4C32M16D1-5BANTR OMO.#: OMO-AS4C32M16D1-5BANTR	DRAM 512M 2.5V 200MHz 32Mx16 DDR1 A-Temp
	Mfr.#: AS4C32M16D2-25BCN OMO.#: OMO-AS4C32M16D2-25BCN	DRAM 512M, 1.8V, 32M x 16 DDR2
	Mfr.#: AS4C32M16D2B-25BCN OMO.#: OMO-AS4C32M16D2B-25BCN	DRAM 512M, 1.8V, 400Mhz 32M x 16 DDR2
	Mfr.#: AS4C32M16D1-5TINTR OMO.#: OMO-AS4C32M16D1-5TINTR	DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
	Mfr.#: AS4C32M16D2A-25BCN OMO.#: OMO-AS4C32M16D2A-25BCN-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 84FBGA
	Mfr.#: AS4C32M16D1A-5TINTR OMO.#: OMO-AS4C32M16D1A-5TINTR-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 66TSOP II
	Mfr.#: AS4C32M16D2A-25BANTR OMO.#: OMO-AS4C32M16D2A-25BANTR-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 84FBGA
	Mfr.#: AS4C32M16D2-25BCN OMO.#: OMO-AS4C32M16D2-25BCN-ALLIANCE-MEMORY	DRAM 512M, 1.8V, 32M x 16 DDR2
	Mfr.#: AS4C32M16D3-12BCNTR OMO.#: OMO-AS4C32M16D3-12BCNTR-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 96FBGA
	Mfr.#: AS4C32M16D3L-12BCN OMO.#: OMO-AS4C32M16D3L-12BCN-ALLIANCE-MEMORY	IC DRAM 512M PARALLEL 96FBGA

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von AS4C32M16D3L-12BINTR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

Neueste Produkte

TMC 8 Series UL 489 Thermal-Magnetic Circuit Break

Phoenix Contact's TMC 8 series is comprised of 1-pole, 2-pole, and 3-pole thermal-magnetic miniature circuit breakers (MCBs) in accordance with UL 489 and EN 60947-2 for DIN rail-mounted appli
SAMA5D2 Family of MPUs and Eval Board

Microchip’s SAMA5D2 Xplained Ultra is a fast prototyping and evaluation platform for the Atmel SMART SAMA5D2 series Arm® Cortex®-A5 processor based microprocessors.
PAN1026A Comprehensive Embedded Dual Mode Bluetoot

Panasonic offers the PAN1026A comprehensive embedded dual mode Bluetooth® 4.2 RF module for electronic logging devices, gaming, and industrial applications.
Compare AS4C32M16D3L-12BINTR

AS4C32M16D3L12BCN vs AS4C32M16D3L12BCNTR vs AS4C32M16D3L12BIN
NCP1244/46

Featuring Dynamic Self-Supply the NCP1244 and NCP1246 are new fixed-frequency current-mode controllers from ON Semiconductor.
N-Channel SuperFET® II MOSFET

Tailored to minimize conduction loss, provide superior switching performance and suitable for various AC / DC power conversions from On Semiconductor.

More Newest Products

AS4C32M16D3L-12BINTR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes