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SIHD7N60ET4-GE3

SIHD7N60ET4-GE3
Mfr. #:
SIHD7N60ET4-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds E Series DPAK TO-252
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHD7N60ET4-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD7N60ET4-GE3 DatasheetSIHD7N60ET4-GE3 Datasheet (P4-P6)SIHD7N60ET4-GE3 Datasheet (P7-P9)SIHD7N60ET4-GE3 Datasheet (P10)
ECAD Model:
Mehr Informationen:
SIHD7N60ET4-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
609 V
Id - Kontinuierlicher Drainstrom:
7 A
Rds On - Drain-Source-Widerstand:
600 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
40 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
78 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
E
Transistortyp:
MOSFET
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
13 ns
Gewichtseinheit:
0.011993 oz
Tags
SIHD7N60ET, SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 7A 3-Pin TO-252
***i-Key
MOSFET N-CH 600V 7A TO252AA
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHD7N60ET4-GE3
DISTI # V36:1790_17600263		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK0
  • 3000000:$0.7772
  • 1500000:$0.7774
  • 300000:$0.7882
  • 30000:$0.8052
  • 3000:$0.8080
SIHD7N60ET4-GE3
DISTI # SIHD7N60ET4-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO252AA
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.8080
SIHD7N60ET4-GE3
DISTI # SIHD7N60ET4-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin TO-252 - Tape and Reel (Alt: SIHD7N60ET4-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7299
  • 18000:$0.7499
  • 12000:$0.7719
  • 6000:$0.8049
  • 3000:$0.8289
SIHD7N60ET4-GE3
DISTI # 78-SIHD7N60ET4-GE3		Vishay IntertechnologiesMOSFET 600V Vds E Series DPAK TO-252
RoHS: Compliant		0
  • 1:$1.7700
  • 10:$1.4700
  • 100:$1.1400
  • 500:$0.9970
  • 1000:$0.8260
  • 3000:$0.7690
  • 6000:$0.7410
  • 9000:$0.7120
Bild Teil # Beschreibung
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3

 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3

 MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60ETR-GE3

Mfr.#: SIHD7N60ETR-GE3

OMO.#: OMO-SIHD7N60ETR-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ETL-GE3

Mfr.#: SIHD7N60ETL-GE3

OMO.#: OMO-SIHD7N60ETL-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-E3

Mfr.#: SIHD7N60E-E3

OMO.#: OMO-SIHD7N60E-E3-VISHAY

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E

Mfr.#: SIHD7N60E

OMO.#: OMO-SIHD7N60E-1190

 Neu und Original
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3-VISHAY

 MOSFET N-CH 600V 7A TO-252
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von SIHD7N60ET4-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,77 $
1,77 $
10
1,47 $
14,70 $
100
1,14 $
114,00 $
500
1,00 $
498,50 $
1000
0,83 $
826,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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