SQD23N0631LGE3

SQD23N0631LGE3
Mfr. #:
SQD23N0631LGE3
Hersteller:
Vishay Intertechnologies
Beschreibung:
Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SQD23N0631LGE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SQD23, SQD2, SQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SQD23N06-31L-GE3
DISTI # V36:1790_09219196
Vishay IntertechnologiesN-CHANNEL 60V DPAK
RoHS: Compliant
0
  • 2000000:$0.6627
  • 1000000:$0.6629
  • 200000:$0.6803
  • 20000:$0.7096
  • 2000:$0.7144
SQD23N06-31L_GE3
DISTI # SQD23N06-31L_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L_GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 20000:$0.6229
  • 12000:$0.6399
  • 8000:$0.6579
  • 4000:$0.6859
  • 2000:$0.7069
SQD23N06-31L_GE3
DISTI # SQD23N06-31L-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK (Alt: SQD23N06-31L-GE3)
RoHS: Compliant
Min Qty: 2000
Europe - 0
  • 20000:€0.5529
  • 12000:€0.5779
  • 8000:€0.6539
  • 4000:€0.8069
  • 2000:€1.1249
SQD23N06-31L_GE3
DISTI # SQD23N06-31L-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L-GE3)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel
Americas - 0
    SQD23N06-31L_GE3
    DISTI # 781-SQD23N06-31L_GE3
    Vishay IntertechnologiesMOSFET 60V 23A 100W AEC-Q101 Qualified
    RoHS: Compliant
    3967
    • 1:$1.5500
    • 10:$1.3900
    • 100:$1.1100
    • 500:$0.9190
    • 1000:$0.7620
    • 2000:$0.7140
    • 4000:$0.6800
    • 10000:$0.6750
    SQD23N06-31L-GE3
    DISTI # 781-SQD23N06-31L-GE3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
    RoHS: Compliant
    0
      SQD23N06-31L-GE3Vishay Intertechnologies 531
        SQD23N06-31L-GE3Vishay Intertechnologies 1272
        • 318:$0.5460
        • 58:$0.6300
        • 1:$2.1000
        SQD23N0631LGE3Vishay IntertechnologiesPower Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
        RoHS: Compliant
        2000
          SQD23N06-31L-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
          RoHS: Compliant
          Americas -
            Bild Teil # Beschreibung
            SQD23N06-31L_GE3

            Mfr.#: SQD23N06-31L_GE3

            OMO.#: OMO-SQD23N06-31L-GE3-479

            MOSFET 60V 23A 100W AEC-Q101 Qualified
            SQD23N06-31L_T4GE3

            Mfr.#: SQD23N06-31L_T4GE3

            OMO.#: OMO-SQD23N06-31L-T4GE3

            MOSFET 60V Vds 20V Vgs TO-252
            SQD23N06-31L-GE3

            Mfr.#: SQD23N06-31L-GE3

            OMO.#: OMO-SQD23N06-31L-GE3-B59

            MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
            SQD23N06-31L_GE3

            Mfr.#: SQD23N06-31L_GE3

            OMO.#: OMO-SQD23N06-31L-GE3-VISHAY

            MOSFET N-CH 60V 23A TO252
            SQD23N06-31L

            Mfr.#: SQD23N06-31L

            OMO.#: OMO-SQD23N06-31L-1190

            Neu und Original
            SQD23N06-31L-GE3

            Mfr.#: SQD23N06-31L-GE3

            OMO.#: OMO-SQD23N06-31L-GE3-1190

            N-CHANNEL 60V DPAK
            SQD23N0631LGE3

            Mfr.#: SQD23N0631LGE3

            OMO.#: OMO-SQD23N0631LGE3-1190

            Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4000
            Menge eingeben:
            Der aktuelle Preis von SQD23N0631LGE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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