SQD23N06-31L-GE3

Mfr. #:: SQD23N06-31L-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SQD23N06-31L-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Qualifikation:: AEC-Q101

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SQ

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 2000

Unterkategorie:: MOSFETs

Gewichtseinheit:: 0.050717 oz

Tags: SQD23N06-3, SQD23, SQD2, SQD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQD23N06-31L-GE3 Beschreibung

***ure Electronics: SQD23N06 Series 60 V 23 A 31 mOhm Automotive N-Channel Mosfet - TO-252-3

***ical: Trans MOSFET N-CH 60V 23A Automotive 3-Pin(2+Tab) TO-252AA T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SQD23N06-31L-GE3 DISTI # V36:1790_09219196	Vishay Intertechnologies	N-CHANNEL 60V DPAK RoHS: Compliant	0	2000000:$0.6627 1000000:$0.6629 200000:$0.6803 20000:$0.7096 2000:$0.7144
SQD23N06-31L_GE3 DISTI # SQD23N06-31L_GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 23A TO252 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.6532 6000:$0.6787 2000:$0.7144
SQD23N06-31L_GE3 DISTI # SQD23N06-31L_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L_GE3) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$0.6229 12000:$0.6399 8000:$0.6579 4000:$0.6859 2000:$0.7069
SQD23N06-31L_GE3 DISTI # SQD23N06-31L-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK (Alt: SQD23N06-31L-GE3) RoHS: Compliant Min Qty: 2000	Europe - 0	20000:€0.5529 12000:€0.5779 8000:€0.6539 4000:€0.8069 2000:€1.1249
SQD23N06-31L_GE3 DISTI # SQD23N06-31L-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L-GE3) RoHS: Not Compliant Min Qty: 2000 Container: Reel	Americas - 0
SQD23N06-31L_GE3 DISTI # 781-SQD23N06-31L_GE3	Vishay Intertechnologies	MOSFET 60V 23A 100W AEC-Q101 Qualified RoHS: Compliant	3967	1:$1.5500 10:$1.3900 100:$1.1100 500:$0.9190 1000:$0.7620 2000:$0.7140 4000:$0.6800 10000:$0.6750
SQD23N06-31L-GE3 DISTI # 781-SQD23N06-31L-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3 RoHS: Compliant	0
SQD23N06-31L-GE3	Vishay Intertechnologies		531
SQD23N06-31L-GE3	Vishay Intertechnologies		1272	318:$0.5460 58:$0.6300 1:$2.1000
SQD23N0631LGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	2000
SQD23N06-31L-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3 RoHS: Compliant	Americas -

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SQD23N06-31L_GE3 OMO.#: OMO-SQD23N06-31L-GE3-479	MOSFET 60V 23A 100W AEC-Q101 Qualified
	Mfr.#: SQD23N06-31L_T4GE3 OMO.#: OMO-SQD23N06-31L-T4GE3	MOSFET 60V Vds 20V Vgs TO-252
	Mfr.#: SQD23N06-31L-GE3 OMO.#: OMO-SQD23N06-31L-GE3-B59	MOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
	Mfr.#: SQD23N06-31L_GE3 OMO.#: OMO-SQD23N06-31L-GE3-VISHAY	MOSFET N-CH 60V 23A TO252
	Mfr.#: SQD23N06-31L OMO.#: OMO-SQD23N06-31L-1190	Neu und Original
	Mfr.#: SQD23N06-31L-GE3 OMO.#: OMO-SQD23N06-31L-GE3-1190	N-CHANNEL 60V DPAK
	Mfr.#: SQD23N0631LGE3 OMO.#: OMO-SQD23N0631LGE3-1190	Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5500
Menge eingeben:

Der aktuelle Preis von SQD23N06-31L-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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SQD23N06-31L-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes