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IPB020NE7N3GATMA1

IPB020NE7N3GATMA1
Mfr. #:
IPB020NE7N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 75V 120A TO263-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB020NE7N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPB020NE7N3G, IPB020NE, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 75 V 2 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK
***nell
MOSFET, N CH, 75V, 120A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Teil # Mfg. Beschreibung Aktie Preis
IPB020NE7N3GATMA1
DISTI # V72:2272_06377372		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.7250
  • 500:$3.3590
  • 250:$3.9820
  • 100:$4.0220
  • 25:$4.9509
  • 10:$5.0010
  • 1:$6.1787
IPB020NE7N3GATMA1
DISTI # V36:1790_06377372		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$2.3000
  • 500000:$2.3020
  • 100000:$2.4680
  • 10000:$2.7450
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$2.7575
  • 1000:$2.9027
IPB020NE7N3GATMA1
DISTI # 32911882		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.4235
IPB020NE7N3GATMA1
DISTI # 32914046		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 3:$6.1787
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 142
Container: Bulk		Americas - 0
  • 710:$2.1900
  • 1420:$2.1900
  • 426:$2.2900
  • 284:$2.3900
  • 142:$2.4900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$2.4900
  • 10000:$2.4900
  • 4000:$2.5900
  • 2000:$2.6900
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # SP000676950		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000676950)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.3900
  • 2000:€2.4900
  • 1000:€2.5900
IPB020NE7N3GATMA1
DISTI # 85X6012		Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V RoHS Compliant: Yes0
    IPB020NE7N3 G
    DISTI # 726-IPB020NE7N3GXT    		Infineon Technologies AGMOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		525
    • 1:$5.2200
    • 10:$4.4400
    • 100:$3.8500
    • 250:$3.6500
    • 500:$3.2700
    • 1000:$2.7600
    • 2000:$2.6200
    IPB020NE7N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10245
    • 1000:$2.3300
    • 500:$2.4500
    • 100:$2.5500
    • 25:$2.6600
    • 1:$2.8700
    IPB020NE7N3GATMA1
    DISTI # 8259213P    		Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, RL1630
    • 25:£2.0800
    IPB020NE7N3GATMA1
    DISTI # 8259213    		Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, PK150
    • 25:£2.0800
    • 5:£2.1340
    IPB020NE7N3GATMA1
    DISTI # IPB020NE7N3GATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,120A,300W,PG-TO263-3379
    • 100:$1.9933
    • 10:$2.3875
    • 3:$2.5902
    • 1:$2.7816
    IPB020NE7N3GATMA1
    DISTI # 2443378    		Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    IPB020NE7N3GATMA1
    DISTI # 2443378RL    		Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    Bild Teil # Beschreibung
    IPB020NE7N3 G

    Mfr.#: IPB020NE7N3 G

    OMO.#: OMO-IPB020NE7N3-G

    		 MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
    IPB020NE7N3

    Mfr.#: IPB020NE7N3

    OMO.#: OMO-IPB020NE7N3-1190

    		 Neu und Original
    IPB020NE7N3 G

    Mfr.#: IPB020NE7N3 G

    OMO.#: OMO-IPB020NE7N3-G-1190

    		 Trans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G)
    IPB020NE7N3G

    Mfr.#: IPB020NE7N3G

    OMO.#: OMO-IPB020NE7N3G-1190

    		 Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB020NE7N3G(020NE7N)

    Mfr.#: IPB020NE7N3G(020NE7N)

    OMO.#: OMO-IPB020NE7N3G-020NE7N--1190

    		 Neu und Original
    IPB020NE7N3GATMA1

    Mfr.#: IPB020NE7N3GATMA1

    OMO.#: OMO-IPB020NE7N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 75V 120A TO263-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von IPB020NE7N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,99 $
    2,99 $
    10
    2,84 $
    28,40 $
    100
    2,69 $
    269,10 $
    500
    2,54 $
    1 270,75 $
    1000
    2,39 $
    2 392,00 $
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