 | |  | |
| PartNumber | IPB020NE7N3G | IPB020NE7N3G(020NE7N) | IPB020NE7N3GATMA1 |
| Description | Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | MOSFET N-CH 75V 120A TO263-3 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| IPB020NE7N3G | Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB020NE7N3G(020NE7N) | Neu und Original | ||
Infineon Technologies |
IPB020NE7N3GATMA1 | MOSFET N-CH 75V 120A TO263-3 |