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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIHB30N60E-GE3 DISTI # V36:1790_09219022 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK RoHS: Compliant | 0 | |
| SIHB30N60E-GE3 DISTI # SIHB30N60E-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 29A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube | 776In Stock |
|
| SIHB30N60E-GE3 DISTI # SIHB30N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB30N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| SIHB30N60E-GE3 DISTI # 78-SIHB30N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 279 |
|
| SIHB30N60E-E3 DISTI # 781-SIHB30N60E-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 0 | |
| SIHB30N60E-GE3 | Vishay Intertechnologies | 96 | ||
| SIHB30N60E-GE3 | Vishay Intertechnologies | 1000 | ||
| SIHB30N60EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1000 | |
| SIHB30N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | Americas - |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SIHB30N60E-E3 OMO.#: OMO-SIHB30N60E-E3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
Mfr.#: SIHB30N60E-E3 OMO.#: OMO-SIHB30N60E-E3-VISHAY |
RF Bipolar Transistors MOSFET N-Channel 600V |
|
Mfr.#: SIHB30N60E-GE3-CUT TAPE |
Neu und Original |
|
|
Mfr.#: SIHB30N60E-GE3 OMO.#: OMO-SIHB30N60E-GE3-VISHAY |
MOSFET N-CH 600V 29A D2PAK |