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SIA433EDJ-T1-GE3

SIA433EDJ-T1-GE3
Mfr. #:
SIA433EDJ-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 20V 12A SC-70-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA433EDJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA433EDJ-T1-GE3 DatasheetSIA433EDJ-T1-GE3 Datasheet (P4-P6)SIA433EDJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SIA433EDJ-GE3
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR SC-70-6
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR SC-70-6 Single
Aufbau
Single
FET-Typ
MOSFET P-Kanal, Metalloxid
Leistung max
19W
Transistor-Typ
1 P-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
12A (Tc)
Rds-On-Max-Id-Vgs
18 mOhm @ 7.6A, 4.5V
Vgs-th-Max-Id
1.2V @ 250μA
Gate-Lade-Qg-Vgs
75nC @ 8V
Pd-Verlustleistung
19 W
Abfallzeit
3.2 us
Anstiegszeit
1.7 us
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
- 12 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Vgs-th-Gate-Source-Threshold-Voltage
- 1.2 V
Rds-On-Drain-Source-Widerstand
18 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
6 us
Typische-Einschaltverzögerungszeit
0.71 us
Qg-Gate-Ladung
50 nC
Vorwärts-Transkonduktanz-Min
35 S
Tags
SIA433, SIA43, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SIA433EDJ-T1-GE3
DISTI # V72:2272_09216837		Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		644
  • 500:$0.3232
  • 250:$0.3761
  • 100:$0.3771
  • 25:$0.4647
  • 10:$0.4666
  • 1:$0.5489
SIA433EDJ-T1-GE3
DISTI # SIA433EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7836In Stock
  • 1000:$0.3263
  • 500:$0.4079
  • 100:$0.5506
  • 10:$0.7140
  • 1:$0.8200
SIA433EDJ-T1-GE3
DISTI # SIA433EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7836In Stock
  • 1000:$0.3263
  • 500:$0.4079
  • 100:$0.5506
  • 10:$0.7140
  • 1:$0.8200
SIA433EDJ-T1-GE3
DISTI # SIA433EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 12A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.2871
SIA433EDJ-T1-GE3
DISTI # 29553397		Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		644
  • 500:$0.3232
  • 250:$0.3761
  • 100:$0.3771
  • 28:$0.4647
SIA433EDJ-T1-GE3
DISTI # SIA433EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA433EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA433EDJ-T1-GE3
    DISTI # SIA433EDJ-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA433EDJ-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.3219
    • 6000:$0.3119
    • 12000:$0.2999
    • 18000:$0.2909
    • 30000:$0.2829
    SIA433EDJ-T1-GE3
    DISTI # SIA433EDJ-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA433EDJ-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.5619
    • 6000:€0.3829
    • 12000:€0.3299
    • 18000:€0.3049
    • 30000:€0.2829
    SIA433EDJ-T1-GE3
    DISTI # 79R5403    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 11.3A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 79R5403)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.7200
    • 25:$0.5750
    • 50:$0.5060
    • 100:$0.4360
    • 250:$0.3980
    • 500:$0.3600
    • 1000:$0.2880
    SIA433EDJ-T1-GE3
    DISTI # 79R5403    		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):18mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-500mV,Power Dissipation Pd:3.5W , RoHS Compliant: Yes0
    • 1:$0.7200
    • 25:$0.5750
    • 50:$0.5060
    • 100:$0.4360
    • 250:$0.3980
    • 500:$0.3600
    • 1000:$0.2880
    SIA433EDJ-T1-GE3
    DISTI # 74R0197    		Vishay IntertechnologiesP CH MOSFET,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-20V,No. of Pins:6,On Resistance Rds(on):18mohm,Operating Temperature Max:150°C,Operating Temperature Min:-55°C,Operating Temperature Range:-55°C to +150°C , RoHS Compliant: Yes0
    • 1:$0.2670
    • 3000:$0.2650
    • 6000:$0.2520
    • 12000:$0.2240
    SIA433EDJ-T1-GE3
    DISTI # 70459574    		Vishay Siliconix-20V [email protected] 12A P-Ch G-III
    RoHS: Compliant    		0
    • 3000:$0.3580
    • 6000:$0.3330
    SIA433EDJ-T1-GE3
    DISTI # 781-SIA433EDJ-GE3    		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
    RoHS: Compliant    		275
    • 1:$0.7200
    • 10:$0.5750
    • 100:$0.4360
    • 500:$0.3600
    • 1000:$0.2880
    • 3000:$0.2610
    • 6000:$0.2440
    SIA433EDJ-T1-GE3Vishay Siliconix 5750
    • 9:$0.6000
    • 35:$0.3900
    • 130:$0.2250
    • 446:$0.1920
    • 965:$0.1680
    • 2293:$0.1560
    SIA433EDJ-T1-GE3Vishay SemiconductorsPOWER FIELD-EFFECT TRANSISTOR, 12A I(D), 20V, 0.018OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET4600
    • 3847:$0.2000
    • 834:$0.2080
    • 1:$0.8000
    SIA433EDJT1GE3Vishay Intertechnologies 
    RoHS: Compliant    		Europe - 3000
      SIA433EDJ-T1-GE3
      DISTI # 2679708      		Vishay IntertechnologiesMOSFET, P-CH, -20V, -12A, POWERPAK SC70
      RoHS: Compliant      		0
      • 3000:£0.2080
      • 9000:£0.2070
      SIA433EDJ-T1-GE3.
      DISTI # 1867633      		Vishay IntertechnologiesP CHANNEL MOSFET
      RoHS: Compliant      		0
      • 1:£0.6330
      • 25:£0.5050
      • 50:£0.4440
      • 100:£0.3840
      • 250:£0.3500
      SIA433EDJ-T1-GE3
      DISTI # C1S803601064547      		Vishay IntertechnologiesMOSFETs
      RoHS: Not Compliant      		644
      • 250:$0.3761
      • 100:$0.3771
      • 25:$0.4648
      • 10:$0.4666
      SIA433EDJ-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs PowerPAK SC-70
      RoHS: Compliant      		Americas - Stock
        SIA433EDJ-T1-GE3
        DISTI # 2646398        		Vishay IntertechnologiesMOSFET, P-CH, -20V, -12A, POWERPAK SC70
        RoHS: Compliant        		0
        • 1:$1.1500
        • 10:$0.9110
        • 100:$0.6900
        • 500:$0.5710
        • 1000:$0.4560
        • 3000:$0.4320
        SIA433EDJ-T1-GE3
        DISTI # 2679708        		Vishay IntertechnologiesMOSFET, P-CH, -20V, -12A, POWERPAK SC70
        RoHS: Compliant        		0
        • 3000:$0.4030
        • 6000:$0.3930
        • 9000:$0.3900
        SIA433EDJ-T1-GE3.
        DISTI # 1867633        		Vishay IntertechnologiesP CHANNEL MOSFET
        RoHS: Compliant        		4247
        • 1:$1.1100
        • 50:$0.9070
        • 100:$0.6990
        • 500:$0.5830
        • 1000:$0.5000
        • 2500:$0.4710
        Bild Teil # Beschreibung
        SIA433EDJ-T1-GE3-CUT TAPE

        Mfr.#: SIA433EDJ-T1-GE3-CUT TAPE

        OMO.#: OMO-SIA433EDJ-T1-GE3-CUT-TAPE-1190

        		 Neu und Original
        SIA433EDJ

        Mfr.#: SIA433EDJ

        OMO.#: OMO-SIA433EDJ-1190

        		 Neu und Original
        SIA433EDJ-T1-GE3

        Mfr.#: SIA433EDJ-T1-GE3

        OMO.#: OMO-SIA433EDJ-T1-GE3-VISHAY

        		 MOSFET P-CH 20V 12A SC-70-6
        SIA433EDJT1GE3

        Mfr.#: SIA433EDJT1GE3

        OMO.#: OMO-SIA433EDJT1GE3-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von SIA433EDJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,23 $
        0,23 $
        10
        0,22 $
        2,22 $
        100
        0,21 $
        21,06 $
        500
        0,20 $
        99,45 $
        1000
        0,19 $
        187,20 $
        Beginnen mit
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