IRL60S216

IRL60S216
Mfr. #:
IRL60S216
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 60V 195A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRL60S216 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL60S216 DatasheetIRL60S216 Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Internationaler Gleichrichter
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Tags
IRL60, IRL6, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 800, N-Channel MOSFET, 298 A, 60 V, 3-Pin D2PAK Infineon IRL60S216
***ure Electronics
Single N-Channel 60 V 1.6 mOhm 170 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 60V 298A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 60V 298A 3-Pin D2PAK T/R
***i-Key
MOSFET N-CH 60V 195A
***ark
MOSFET, N-CH, 60V, 195A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
***ineon
Benefits: Optimized for Logic Level Drive; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free; RoHS Compliant, Halogen-Free
***ment14 APAC
MOSFET, N-CH, 60V, 195A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:375W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 60V, 195A, TO-263AB; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:195A; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):0.0016ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:2.4V; Straty mocy Pd:375W; Rodzaj obudowy tranzystora:TO-263AB; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:HEXFET Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IRL60S216
DISTI # V72:2272_14701543
Infineon Technologies AGTrans MOSFET N-CH 60V 298A T/R1919
  • 1000:$3.5200
  • 500:$3.5570
  • 250:$3.8720
  • 100:$4.0580
  • 25:$4.5759
  • 10:$4.8040
  • 1:$5.2410
IRL60S216
DISTI # IRL60S216CT-ND
Infineon Technologies AGMOSFET N-CH 60V 195A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1255In Stock
  • 100:$5.5493
  • 10:$6.7490
  • 1:$7.5000
IRL60S216
DISTI # IRL60S216DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 195A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1255In Stock
  • 100:$5.5493
  • 10:$6.7490
  • 1:$7.5000
IRL60S216
DISTI # IRL60S216TR-ND
Infineon Technologies AGMOSFET N-CH 60V 195A
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 800:$4.1645
IRL60S216
DISTI # 26196646
Infineon Technologies AGTrans MOSFET N-CH 60V 298A T/R1919
  • 250:$4.0030
  • 100:$4.1600
  • 25:$4.6510
  • 10:$4.8430
  • 3:$5.2430
IRL60S216
DISTI # 21815625
Infineon Technologies AGTrans MOSFET N-CH 60V 298A T/R1600
  • 800:$4.1797
IRL60S216
DISTI # SP001573906
Infineon Technologies AGTrans MOSFET N-CH 60V 298A 3-Pin D2PAK T/R (Alt: SP001573906)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 2400
  • 800:€3.4900
  • 1600:€3.4900
  • 3200:€3.4900
  • 4800:€3.4900
  • 8000:€3.4900
IRL60S216
DISTI # IRL60S216
Infineon Technologies AGTrans MOSFET N-CH 60V 298A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRL60S216)
RoHS: Compliant
Min Qty: 1600
Container: Reel
Americas - 0
  • 1600:$2.9900
  • 3200:$2.8900
  • 4800:$2.7900
  • 8000:$2.6900
  • 16000:$2.5900
IRL60S216
DISTI # 34AC1801
Infineon Technologies AGMOSFET, N-CH, 60V, 195A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:195A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,Power RoHS Compliant: Yes1439
  • 1:$6.3000
  • 10:$5.7000
  • 25:$5.4300
  • 50:$5.0800
  • 100:$4.7200
  • 250:$4.5100
  • 500:$4.1100
IRL60S216
DISTI # 942-IRL60S216
Infineon Technologies AGMOSFET 60V, 298A, 1.95 mOhm 170 NC Qg
RoHS: Compliant
748
  • 1:$6.3000
  • 10:$5.7000
  • 25:$5.4300
  • 100:$4.7200
  • 250:$4.5100
  • 500:$4.1100
IRL60S216
DISTI # 1236146P
Infineon Technologies AGSTRONGIR FET 60V 298A 1.95 MOHMD2PAK, RL1464
  • 10:£4.1150
  • 40:£3.9300
  • 100:£3.4100
  • 200:£3.3400
IRL60S216
DISTI # 2781152
Infineon Technologies AGMOSFET, N-CH, 60V, 195A, TO-263AB
RoHS: Compliant
1445
  • 1:$8.2400
  • 10:$7.7000
  • 100:$6.8100
  • 250:$6.4400
  • 500:$6.1100
  • 1000:$5.8100
IRL60S216
DISTI # 2781152
Infineon Technologies AGMOSFET, N-CH, 60V, 195A, TO-263AB
RoHS: Compliant
1439
  • 1:£4.8800
  • 10:£3.9300
  • 100:£3.3400
  • 250:£3.2300
  • 500:£3.1100
IRL60S216
DISTI # C1S322000609891
Infineon Technologies AGMOSFETs1600
  • 1600:$3.0900
IRL60S216
DISTI # C1S322000625747
Infineon Technologies AGMOSFETs1919
  • 250:$4.0030
  • 100:$4.1600
  • 25:$4.6510
  • 10:$4.8430
  • 1:$5.2430
Bild Teil # Beschreibung
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MOSFET 200V N-Channel a-FET Logic Level
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Mfr.#: IRL630SPBF

OMO.#: OMO-IRL630SPBF

MOSFET N-CH 200V HEXFET MOSFET D2-PA
IRL640STRLPBF

Mfr.#: IRL640STRLPBF

OMO.#: OMO-IRL640STRLPBF

MOSFET N-Chan 200V 17 Amp
IRL6283MTRPBF

Mfr.#: IRL6283MTRPBF

OMO.#: OMO-IRL6283MTRPBF

MOSFET MOSFET N-CH 20V 211A DIRECTFET
IRL630STRR

Mfr.#: IRL630STRR

OMO.#: OMO-IRL630STRR-VISHAY

MOSFET N-CH 200V 9A D2PAK
IRL640STRRPBF

Mfr.#: IRL640STRRPBF

OMO.#: OMO-IRL640STRRPBF-VISHAY

IGBT Transistors MOSFET N-Chan 200V 17 Amp
IRL60B216PBF

Mfr.#: IRL60B216PBF

OMO.#: OMO-IRL60B216PBF-1190

Neu und Original
IRL630STRL

Mfr.#: IRL630STRL

OMO.#: OMO-IRL630STRL-VISHAY

MOSFET N-CH 200V 9A D2PAK
IRL630STRPBF

Mfr.#: IRL630STRPBF

OMO.#: OMO-IRL630STRPBF-1190

Neu und Original
IRL6372PBF

Mfr.#: IRL6372PBF

OMO.#: OMO-IRL6372PBF-INFINEON-TECHNOLOGIES

MOSFET 2N-CH 30V 8.1A 8SO
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IRL60S216 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,88 $
3,88 $
10
3,69 $
36,91 $
100
3,50 $
349,65 $
500
3,30 $
1 651,15 $
1000
3,11 $
3 108,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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