PartNumber | IRL60B216 | IRL60HS118 | IRL60S216 |
Description | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-CH 60V 195A |
Manufacturer | Infineon | Infineon | International Rectifier |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | TO-220-3 | PQFN-6 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 305 A | 18.5 A | - |
Rds On Drain Source Resistance | 2.2 mOhms | 13.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | 1.1 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 172 nC | 8 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 375 W | 2.5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | StrongIRFET | OptiMOS | - |
Packaging | Tube | Reel | - |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 264 S | 17 S | - |
Fall Time | 120 ns | 5 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 185 ns | 21 ns | - |
Factory Pack Quantity | 1000 | 4000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 190 ns | 9 ns | - |
Typical Turn On Delay Time | 70 ns | 8.4 ns | - |
Part # Aliases | SP001568416 | SP001592258 | - |
Unit Weight | 0.211644 oz | - | - |
Series | - | OptiMOS 5 | - |
Transistor Type | - | 1 N-Channel | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Infineon Technologies |
IRL60B216 | MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl | |
IRL6297SDTRPBF | MOSFET 20V Dual N-Channel HEXFET | ||
IRL60SL216 | MOSFET N-CH 60V 195A | ||
IRL60B216 | MOSFET N-CH 60V 195A | ||
IRL60HS118 | MOSFET N-CH 60V 18.5A 6PQFN | ||
IRL60S216 | MOSFET N-CH 60V 195A | ||
IRL6283MTRPBF | MOSFET N-CH 20V 211A DIRECTFET | ||
IRL6297SDTRPBF | MOSFET 2N-CH 20V 15A DIRECTFET | ||
Vishay / Siliconix |
IRL620SPBF | MOSFET N-CH 200V HEXFET MOSFET D2-PA | |
IRL630SPBF | MOSFET N-CH 200V HEXFET MOSFET D2-PA | ||
IRL630STRRPBF | MOSFET N-CH 200V HEXFET MOSFET D2-PA | ||
IRL620PBF | MOSFET RECOMMENDED ALT 844-IRF620PBF | ||
IRL630PBF | MOSFET N-CH 200V HEXFET MOSFET | ||
IRL630STRLPBF | MOSFET N-Chan 200V 9.0 Amp | ||
IRL630S | MOSFET RECOMMENDED ALT 844-IRL630SPBF | ||
IRL620S | MOSFET RECOMMENDED ALT 844-IRL620SPBF | ||
IRL630STRL | MOSFET RECOMMENDED ALT 844-IRL630STRLPBF | ||
IRL620STRLPBF | MOSFET RECOMMENDED ALT 844-IRL620SPBF | ||
IRL630STRR | MOSFET RECOMMENDED ALT 844-IRL630STRRPBF | ||
ON Semiconductor / Fairchild |
IRL610A | MOSFET 200V N-Channel a-FET Logic Level | |
Infineon Technologies |
IRL60HS118 | MOSFET DIFFERENTIATED MOSFETS | |
Infineon / IR |
IRL6283MTRPBF | MOSFET MOSFET N-CH 20V 211A DIRECTFET | |
Vishay |
IRL630SPBF | MOSFET N-CH 200V 9A D2PAK | |
IRL620PBF | MOSFET N-CH 200V 5.2A TO-220AB | ||
IRL620SPBF | MOSFET N-CH 200V 5.2A D2PAK | ||
IRL620STRLPBF | MOSFET N-CH 200V 5.2A D2PAK | ||
IRL620STRL | MOSFET N-CH 200V 5.2A D2PAK | ||
IRL630STRR | MOSFET N-CH 200V 9A D2PAK | ||
IRL630STRRPBF | IGBT Transistors MOSFET N-Chan 200V 9.0 Amp | ||
IRL630 | MOSFET N-CH 200V 9A TO-220AB | ||
IRL620 | MOSFET N-Chan 200V 5.2 Amp | ||
IRL620S | MOSFET N-CH 200V 5.2A D2PAK | ||
IRL620STRR | MOSFET N-CH 200V 5.2A D2PAK | ||
IRL630PBF | MOSFET N-CH 200V 9A TO-220AB | ||
IRL630S | MOSFET N-CH 200V 9A D2PAK | ||
IRL630STRL | MOSFET N-CH 200V 9A D2PAK | ||
IRL60DL238 | TRENCH MOSFETS DESIGNIN - Tape and Reel (Alt: IRL60DL238) | ||
IRL6297SDTRPBF-CUT TAPE | Neu und Original | ||
IRL60B216PBF | Neu und Original | ||
IRL610 | Neu und Original | ||
IRL610S | Neu und Original | ||
IRL610STRLPBF | Neu und Original | ||
IRL620/ SIHL620 | Neu und Original | ||
IRL620A | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
IRL6297SD | Neu und Original | ||
IRL630NPBF | Neu und Original | ||
IRL630NS | Neu und Original | ||
IRL630STRPBF | Neu und Original | ||
ON Semiconductor |
IRL610A | MOSFET N-CH 200V 3.3A TO-220 | |
IRL630A | MOSFET N-CH 200V 9A TO-220 |