CSD18536KTTT

Mfr. #:: CSD18536KTTT
Beschreibung:: MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD18536KTTT Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD18536KTTT Mehr Informationen CSD18536KTTT Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: N

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 200 A

Rds On - Drain-Source-Widerstand:: 1.7 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.8 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 140 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 375 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 19.7 mm

Länge:: 9.25 mm

Serie:: CSD18536KTT

Transistortyp:: 1 N-Channel

Breite:: 10.26 mm

Marke:: Texas Instruments

Vorwärtstranskonduktanz - Min:: 312 S

Abfallzeit:: 4 ns

Feuchtigkeitsempfindlich:: ja

Produktart:: MOSFET

Anstiegszeit:: 5 ns

Werkspackungsmenge:: 50

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 24 ns

Typische Einschaltverzögerungszeit:: 11 ns

Tags: CSD18536, CSD1853, CSD185, CSD18, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD18536KTTT Beschreibung

***Components: In a Tube of 50, N-Channel MOSFET, 349 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18536KTTT

***as Instruments: 60V, N ch NexFET MOSFET™, single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175

***ical: Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R

***et: Trans MOSFET N-CH 60V 200A 3-Pin TO-263 T/R

***i-Key: MOSFET N-CH 60V 200A D2PAK

***ark: Mosfet, N-Ch, 60V, 349A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:349A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0013Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 349A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:349A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, N-CH, 60V, 349A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:349A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 2 - 1 anno; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

***as Instr.: This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18536KTTT Mehr Informationen

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD18536KTTT DISTI # 32366250	Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	2050	250:$3.4272 100:$3.7879 50:$4.1489
CSD18536KTTT DISTI # 296-44122-1-ND	MOSFET N-CH 60V 200A D2PAK RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	300In Stock	10:$5.2350 1:$5.8600
CSD18536KTTT DISTI # 296-44122-6-ND	MOSFET N-CH 60V 200A D2PAK RoHS: Not compliant Min Qty: 1 Container: Digi-Reel®	300In Stock	10:$5.2350 1:$5.8600
CSD18536KTTT DISTI # 296-44122-2-ND	MOSFET N-CH 60V 200A DDPAK RoHS: Not compliant Min Qty: 50 Container: Tape & Reel (TR)	250In Stock	250:$3.7610 100:$4.1677 50:$4.5742
CSD18536KTTT DISTI # V39:1801_14839651	Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	0
CSD18536KTTT DISTI # V72:2272_14839651	Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R RoHS: Compliant	0
CSD18536KTTT DISTI # CSD18536KTTT	Trans MOSFET N-CH 60V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD18536KTTT) RoHS: Not Compliant Min Qty: 150 Container: Reel	Americas - 0	1500:$2.4900 750:$2.5900 450:$2.6900 300:$2.7900 150:$2.8900
CSD18536KTTT	60V, N ch NexFET MOSFET™, single D2PAK, 1.6mOhm	500	1000:$2.3100 750:$2.3600 500:$2.7200 250:$3.1300 100:$3.3500 25:$3.7400 10:$4.0100 1:$4.4500
CSD18536KTT DISTI # 595-CSD18536KTT	MOSFET KTT pkg spin from CSD18536KCS RoHS: Compliant	731	1:$4.7800 10:$4.2900 100:$3.5100 250:$3.3000 500:$2.9900 1000:$2.5200 2500:$2.3900
CSD18536KTTT DISTI # 595-CSD18536KTTT	MOSFET SMALL REEL OF KTT PKG RoHS: Not compliant	130	1:$5.3800 10:$4.8400 50:$4.8400 100:$3.9600 250:$3.7200 500:$3.3700 1000:$2.8400 2500:$2.7000
CSD18536KTTT DISTI # 1330153P	60V N-CH NEXFET MOSFET DDPAK, RL	60	500:£2.5800 250:£2.8700 50:£3.4900 10:£4.0000
CSD18536KTTT . DISTI # 2545001	MOSFET, N-CH, 60V, 349A, TO-263-3 RoHS: Compliant	0	10:$7.1700 1:$8.0100

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Verfügbarkeit

Aktie:: 90
Auf Bestellung:: 2073
Menge eingeben:

Der aktuelle Preis von CSD18536KTTT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~5,38 $~~; ~~5,38 $~~

10: ~~4,84 $~~; ~~48,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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CSD18536KTTT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes