SIR892DP-T1-GE3-S

SIR892DP-T1-GE3-S
Mfr. #:
SIR892DP-T1-GE3-S
Hersteller:
Vishay Siliconix
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR892DP-T1-GE3-S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SIR892DP-T, SIR892D, SIR892, SIR89, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SIR892DP-T1-GE3
DISTI # SIR892DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIR892DP-T1-GE3
    DISTI # SIR892DP-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SIR892DP-T1-GE3
      DISTI # SIR892DP-T1-GE3DKR-ND
      Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SIR892DP-T1-GE3
        DISTI # 16P3665
        Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes
        RoHS: Compliant
        0
          SIR892DP-T1-GE3
          DISTI # 85W8935
          Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes
          RoHS: Compliant
          0
          • 1000:$1.5200
          • 500:$1.6000
          • 250:$1.7100
          • 100:$1.8200
          • 50:$2.0900
          • 25:$2.3500
          • 1:$2.8300
          Bild Teil # Beschreibung
          SIR892DP-T1-GE3

          Mfr.#: SIR892DP-T1-GE3

          OMO.#: OMO-SIR892DP-T1-GE3

          MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3
          SIR892DP-T1-GE3

          Mfr.#: SIR892DP-T1-GE3

          OMO.#: OMO-SIR892DP-T1-GE3-VISHAY

          IGBT Transistors MOSFET 25V 50A 50W 3.2mohm @ 10V
          SIR892DP

          Mfr.#: SIR892DP

          OMO.#: OMO-SIR892DP-1190

          Neu und Original
          SIR892DP-T1-E3

          Mfr.#: SIR892DP-T1-E3

          OMO.#: OMO-SIR892DP-T1-E3-1190

          Neu und Original
          SIR892DP-T1-GE3-S

          Mfr.#: SIR892DP-T1-GE3-S

          OMO.#: OMO-SIR892DP-T1-GE3-S-1190

          Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          4000
          Menge eingeben:
          Der aktuelle Preis von SIR892DP-T1-GE3-S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
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