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IPP65R110CFDAAKSA1

IPP65R110CFDAAKSA1
Mfr. #:
IPP65R110CFDAAKSA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO220-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP65R110CFDAAKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IPP65R110CFDAAKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IPP65R110
Verpackung
Rohr
Teil-Aliasnamen
IPP65R110CFDA IPP65R110CFDAXK SP000895234
Gewichtseinheit
0.211644 oz
Handelsname
CoolMOS
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
ID-Dauer-Drain-Strom
31.2 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Rds-On-Drain-Source-Widerstand
110 mOhms
Transistor-Polarität
N-Kanal
Tags
IPP65R110CFDA, IPP65R11, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***i-Key
MOSFET N-CH 650V TO-220-3
***ronik
N-CH 650V 31,2A 110mOhm TO220-3
***ark
MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, AEC-Q101, CAN N, 650V, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS Series; Standard di Qualifica Automotive:AEC-Q101; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		458In Stock
  • 1000:$3.8455
  • 500:$4.5597
  • 100:$5.6310
  • 10:$6.8670
  • 1:$7.6900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$3.4900
  • 1000:$3.3900
  • 2000:$3.2900
  • 3000:$3.1900
  • 5000:$3.0900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDA		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube (Alt: IPP65R110CFDA)
RoHS: Compliant
Min Qty: 500
Container: Tube		Asia - 0
    IPP65R110CFDAAKSA1
    DISTI # 726-IPP65R110CFDAAKS    		Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO220-3
    RoHS: Compliant    		263
    • 1:$6.6100
    • 10:$5.6200
    • 100:$4.8700
    • 250:$4.6200
    • 500:$4.1500
    Bild Teil # Beschreibung
    IPP65R110CFDAAKSA1

    Mfr.#: IPP65R110CFDAAKSA1

    OMO.#: OMO-IPP65R110CFDAAKSA1

    		 MOSFET N-Ch 650V 31.2A TO220-3
    IPP65R110CFD

    Mfr.#: IPP65R110CFD

    OMO.#: OMO-IPP65R110CFD

    		 MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
    IPP65R110CFDXKSA2

    Mfr.#: IPP65R110CFDXKSA2

    OMO.#: OMO-IPP65R110CFDXKSA2

    		 MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
    IPP65R110CFDXKSA1

    Mfr.#: IPP65R110CFDXKSA1

    OMO.#: OMO-IPP65R110CFDXKSA1

    		 MOSFET HIGH POWER_LEGACY
    IPP65R110CFDXKSA1

    Mfr.#: IPP65R110CFDXKSA1

    OMO.#: OMO-IPP65R110CFDXKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 700V 31.2A TO220
    IPP65R110CFDXKSA2

    Mfr.#: IPP65R110CFDXKSA2

    OMO.#: OMO-IPP65R110CFDXKSA2-INFINEON-TECHNOLOGIES

    		 HIGH POWER_LEGACY
    IPP65R110CFDA

    Mfr.#: IPP65R110CFDA

    OMO.#: OMO-IPP65R110CFDA-1190

    		 Neu und Original
    IPP65R110CFDA 65F6110A

    Mfr.#: IPP65R110CFDA 65F6110A

    OMO.#: OMO-IPP65R110CFDA-65F6110A-1190

    		 Neu und Original
    IPP65R110CFDAAKSA1

    Mfr.#: IPP65R110CFDAAKSA1

    OMO.#: OMO-IPP65R110CFDAAKSA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO220-3
    IPP65R110CFD

    Mfr.#: IPP65R110CFD

    OMO.#: OMO-IPP65R110CFD-317

    		 RF Bipolar Transistors MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IPP65R110CFDAAKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,64 $
    4,64 $
    10
    4,40 $
    44,03 $
    100
    4,17 $
    417,15 $
    500
    3,94 $
    1 969,90 $
    1000
    3,71 $
    3 708,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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