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DMN3030LSS-13

DMN3030LSS-13
Mfr. #:
DMN3030LSS-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET NMOS SINGLE N-CHANNL 30V 9A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN3030LSS-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
9 A
Rds On - Drain-Source-Widerstand:
18 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.5 mm
Länge:
4.95 mm
Produkt:
MOSFET Kleinsignal
Serie:
DMN3030
Transistortyp:
1 N-Channel
Breite:
3.95 mm
Marke:
Eingebaute Dioden
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
4.5 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
18 ns
Typische Einschaltverzögerungszeit:
3.2 ns
Gewichtseinheit:
0.030018 oz
Tags
DMN3030LS, DMN3030, DMN303, DMN30, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 9A Automotive 8-Pin SO T/R
***ark
Mosfet, N-Ch, 30V, 9A, Soic Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 25±V VGS
***ical
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SOP T/R
***ark
Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ure Electronics
DMG4800 Series Dual N-Channel 30 V 8.5 A 16 Mohm Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 9.8A 8-Pin SOIC T/R
***nell
MOSFET, DUAL N-CH, 30V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 1.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***nsix Microsemi
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***nell
MOSFET,DUAL N-CH 30V 9.7A SO8; Transistor Type:Power MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:9.7A; On State Resistance:15.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; No. of Pins:8; Power Dissipation Pd:2W; Voltage, Vgs th Max:2.35V; Transistor Case Style:SOIC
***ure Electronics
Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Teil # Mfg. Beschreibung Aktie Preis
DMN3030LSS-13
DISTI # 26571911		Zetex / Diodes IncTrans MOSFET N-CH 30V 9A Automotive 8-Pin SO T/R
RoHS: Compliant		5000
  • 2500:$0.1312
DMN3030LSS-13
DISTI # DMN3030LSS-13DICT-ND		Diodes IncorporatedMOSFET N-CH 30V 9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2495In Stock
  • 1000:$0.2022
  • 500:$0.2617
  • 100:$0.3569
  • 10:$0.4760
  • 1:$0.5700
DMN3030LSS-13
DISTI # DMN3030LSS-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 30V 9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2495In Stock
  • 1000:$0.2022
  • 500:$0.2617
  • 100:$0.3569
  • 10:$0.4760
  • 1:$0.5700
DMN3030LSS-13
DISTI # DMN3030LSS-13DITR-ND		Diodes IncorporatedMOSFET N-CH 30V 9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
    DMN3030LSS-13
    DISTI # DMN3030LSS-13    		Diodes IncorporatedTrans MOSFET N-CH 30V 9A 8-Pin SO T/R - Tape and Reel (Alt: DMN3030LSS-13)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.1129
    • 5000:$0.1069
    • 10000:$0.1019
    • 15000:$0.0969
    • 25000:$0.0949
    DMN3030LSS-13
    DISTI # DMN3030LSS-13    		Diodes IncorporatedTrans MOSFET N-CH 30V 9A 8-Pin SO T/R (Alt: DMN3030LSS-13)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.1769
    • 5000:€0.1279
    • 10000:€0.1189
    • 15000:€0.1039
    • 25000:€0.0969
    DMN3030LSS-13
    DISTI # 621-DMN3030LSS-13    		Diodes IncorporatedMOSFET NMOS SINGLE N-CHANNL 30V 9A
    RoHS: Compliant    		5065
    • 1:$0.4600
    • 10:$0.3800
    • 100:$0.2320
    • 1000:$0.1790
    • 2500:$0.1530
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von DMN3030LSS-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,45 $
    0,45 $
    10
    0,38 $
    3,80 $
    100
    0,23 $
    23,20 $
    1000
    0,18 $
    179,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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