 | | ||
| PartNumber | DMN3030LFG-7 | DMN3030LFG | DMN3030LFG-13 |
| Description | MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerDI3333-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5.3 A | - | - |
| Rds On Drain Source Resistance | 10 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 17.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 900 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMN3030 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 6.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6.6 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 2.5 ns | - | - |
| Unit Weight | 0.002540 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN3030LSS-13 | MOSFET NMOS SINGLE N-CHANNL 30V 9A | |
| DMN3030LFG-7 | MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS | ||
| DMN3030LFG | Neu und Original | ||
| DMN3030LFG-13 | Neu und Original | ||
| DMN3030LSS | Neu und Original | ||
| DMN3030LSS-13-F | Neu und Original | ||
| DMN3030LSS-13 | Darlington Transistors MOSFET NMOS SINGLE N-CHANNL 30V 9A | ||
| DMN3030LFG-7 | Darlington Transistors MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS |