DMG6602SVTQ-7

DMG6602SVTQ-7
Mfr. #:
DMG6602SVTQ-7
Hersteller:
Diodes Incorporated
Beschreibung:
IGBT Transistors MOSFET 30V Vds 20V Vgs Complmtry Enh FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMG6602SVTQ-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMG6602SVTQ-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Arrays
Serie
DMG6602
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
SOT-23-6 Thin, TSOT-23-6
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
TSOT-26
Aufbau
1 N-Channel 1 P-Channel
FET-Typ
N- und P-Kanal
Leistung max
840mW
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
400pF @ 15V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
3.4A, 2.8A
Rds-On-Max-Id-Vgs
60 mOhm @ 3.1A, 10V
Vgs-th-Max-Id
2.3V @ 250μA
Gate-Lade-Qg-Vgs
13nC @ 10V
Pd-Verlustleistung
1.27 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
3 ns 13 ns
Anstiegszeit
5 ns 7.3 ns
Vgs-Gate-Source-Spannung
+/- 20 V +/- 20 V
ID-Dauer-Drain-Strom
3.4 A - 2.8 A
Vds-Drain-Source-Breakdown-Voltage
30 V - 30 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V - 2.3 V
Rds-On-Drain-Source-Widerstand
100 mOhms 140 mOhms
Transistor-Polarität
N-Kanal P-Kanal
Typische-Ausschaltverzögerungszeit
13 ns 20 ns
Typische-Einschaltverzögerungszeit
3 ns 4.8 ns
Qg-Gate-Ladung
9 nC 7 nC
Vorwärts-Transkonduktanz-Min
4 S 6 S
Kanal-Modus
Erweiterung
Tags
DMG6602, DMG66, DMG6, DMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N/P-CH 30V TSOT26 / COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
***ical
Trans MOSFET N/P-CH 30V 3.4A/2.8A Automotive 6-Pin TSOT-26 T/R
***ure Electronics
Dual N/P-Channel 30 V 1.27 W 13/9 nC Silicon Surface Mount Mosfet - TSOT-26
***ment14 APAC
MOSFET, AECQ101, COMPLEMENT, 30V, TSOT26
***i-Key
MOSFET N/P-CH 30V TSOT26
***ronik
N+P-CH 30V 3,4/-2,8A 60/95mOhm
***ark
Mosfet, Aec-Q101, Complement, 30V, Tsot26; Transistor Polarity:n And P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.038Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Rohs Compliant: Yes
Adaptive LED Lighting Applications
Diodes Inc. Adaptive LED Lighting Applications are in high demand for lighting in vehicles, including ambient mood lighting, illuminated sill plates and puddle lighting as relatively recent additions. Elegant lighting design, where effects like dimming and fade-in/fade-out are required, need a dimmable device. The LED Drivers with switching regulators allow the maximum overall efficiency with the highest degree of control and accuracy. Simple LED lighting solutions can be implemented with a series resistor, however this has numerous disadvantages in an automotive environment. The LED output will vary with voltage during stop/start events, and VF matched LEDs may be required for visual matching. LED lifetimes may be reduced due to uncontrolled current spikes. Diodes LED Drivers conquer these issues simply and cost-effectively, with a small footprint.
Automotive Applications
Diodes Inc. Automotive Parts have a wide portfolio of automotive-compliant analog, discrete and timing products. The Automotive Parts offer a broad range of solutions for various automotive applications, including BLDC, Adaptive LED Lighting, and Connected Driving.
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
Connected Driving Applications
Diodes Inc. Connected Driving Applications address issues such as finding a parking space, adaptive navigation through busy streets, or using technology to avoid congestion on major roads between cities, along with increasing driver and pedestrian safety. The ultimate objective is the fully autonomous car, which can only be enabled through high-speed data communications. Vehicle-to-Everything (V2X) communications include Vehicle-to-Car, -Pedestrian, -Device and -Grid – fuelled by increased ADAS functionality. The volume of data being generated, transferred and processed within the car is increasing exponentially. Reliable high-speed data communications will be a part of every new vehicle’s infrastructure. Diodes Inc. offers the products to realize the vision of the fully autonomous, connected vehicle.
Automotive Brushless DC (BLDC) Motor Applications
Diodes Inc. Automotive Brushless DC (BLDC) Motors offer improved performance, longer lifetime, reduced noise and greater ease of use when compared to equivalent mechanical solutions. Within the BLDC Motor Systems, MOSFETs are typically configured in a three-phase bridge arrangement to drive the DC motor. The MOSFETs must be capable of handling start-up and stalled motor currents of up to six times the continuous current rating of the motor. The BLDC Motors are extensively used in automotive applications such as fuel pumps, water pumps, Anti-Lock Braking Systems (ABS), and provide additional torque for power steering systems.
Teil # Mfg. Beschreibung Aktie Preis
DMG6602SVTQ-7
DISTI # DMG6602SVTQ-7DITR-ND
Diodes IncorporatedMOSFET N/P-CH 30V TSOT26
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.1209
DMG6602SVTQ-7
DISTI # DMG6602SVTQ-7DICT-ND
Diodes IncorporatedMOSFET N/P-CH 30V TSOT26
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.1347
  • 500:$0.1755
  • 100:$0.2503
  • 10:$0.3590
  • 1:$0.4500
DMG6602SVTQ-7
DISTI # DMG6602SVTQ-7DIDKR-ND
Diodes IncorporatedMOSFET N/P-CH 30V TSOT26
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.1347
  • 500:$0.1755
  • 100:$0.2503
  • 10:$0.3590
  • 1:$0.4500
DMG6602SVTQ-7
DISTI # DMG6602SVTQ-7
Diodes IncorporatedMOSFET (Alt: DMG6602SVTQ-7)
RoHS: Compliant
Min Qty: 3000
Europe - 0
  • 3000:€0.1199
  • 6000:€0.0859
  • 12000:€0.0809
  • 18000:€0.0699
  • 30000:€0.0659
DMG6602SVTQ-7
DISTI # DMG6602SVTQ-7
Diodes IncorporatedMOSFET - Tape and Reel (Alt: DMG6602SVTQ-7)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.0709
  • 6000:$0.0679
  • 12000:$0.0639
  • 18000:$0.0619
  • 30000:$0.0599
DMG6602SVTQ-7
DISTI # DMG6602SVTQ-7
Diodes IncorporatedMOSFET (Alt: DMG6602SVTQ-7)
RoHS: Compliant
Min Qty: 6000
Asia - 0
  • 6000:$0.1035
  • 12000:$0.0989
  • 18000:$0.0947
  • 30000:$0.0921
  • 60000:$0.0909
  • 150000:$0.0885
  • 300000:$0.0862
DMG6602SVTQ-7
DISTI # 621-DMG6602SVTQ-7
Diodes IncorporatedMOSFET 30V Vds 20V Vgs Complmtry Enh FET
RoHS: Compliant
0
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 3000:$0.0930
Bild Teil # Beschreibung
DMG6602SVTX-7

Mfr.#: DMG6602SVTX-7

OMO.#: OMO-DMG6602SVTX-7

MOSFET MOSFET BVDSS: 25V-30V
DMG6602SVT-7

Mfr.#: DMG6602SVT-7

OMO.#: OMO-DMG6602SVT-7

MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
DMG6601LVT-7-F

Mfr.#: DMG6601LVT-7-F

OMO.#: OMO-DMG6601LVT-7-F-1190

Neu und Original
DMG6602SVT-7

Mfr.#: DMG6602SVT-7

OMO.#: OMO-DMG6602SVT-7-DIODES

Neu und Original
DMG6602SVT-7-F

Mfr.#: DMG6602SVT-7-F

OMO.#: OMO-DMG6602SVT-7-F-1190

Neu und Original
DMG6602SVTX

Mfr.#: DMG6602SVTX

OMO.#: OMO-DMG6602SVTX-1190

Neu und Original
DMG6601LVT-7-01

Mfr.#: DMG6601LVT-7-01

OMO.#: OMO-DMG6601LVT-7-01-1190

Neu und Original
DMG6601LVT-7-CUT TAPE

Mfr.#: DMG6601LVT-7-CUT TAPE

OMO.#: OMO-DMG6601LVT-7-CUT-TAPE-1190

Neu und Original
DMG6602SVT-7-CUT TAPE

Mfr.#: DMG6602SVT-7-CUT TAPE

OMO.#: OMO-DMG6602SVT-7-CUT-TAPE-1190

Neu und Original
DMG6602SVTQ-7

Mfr.#: DMG6602SVTQ-7

OMO.#: OMO-DMG6602SVTQ-7-DIODES

IGBT Transistors MOSFET 30V Vds 20V Vgs Complmtry Enh FET
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von DMG6602SVTQ-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,09 $
0,09 $
10
0,09 $
0,85 $
100
0,08 $
8,09 $
500
0,08 $
38,20 $
1000
0,07 $
71,90 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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