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IPP023NE7N3GXKSA1

IPP023NE7N3GXKSA1
Mfr. #:
IPP023NE7N3GXKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP023NE7N3GXKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
2.1 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
206 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
98 S
Abfallzeit:
22 ns
Produktart:
MOSFET
Anstiegszeit:
26 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
19 ns
Teil # Aliase:
G IPP023NE7N3 IPP23NE7N3GXK SP000641722
Gewichtseinheit:
0.211644 oz
Tags
IPP023NE7N3G, IPP023NE7N3, IPP023NE, IPP023, IPP02, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 75V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
Single N-Channel 75 V 2.3 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3
***et
IPP023 - 120A, 75V, 0.0023OHM, N-CHANEL POWER MOSFET, TO-220AB
***ronik
MOSFET 75V 120A 2.3mOHM TO220 RoHSconf
***nell
MOSFET, N-CH, 75V, 120A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Teil # Mfg. Beschreibung Aktie Preis
IPP023NE7N3GXKSA1
DISTI # V99:2348_06377158		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 2500:$2.7550
  • 500:$3.2599
  • 100:$3.7700
  • 25:$3.9640
  • 10:$4.4040
  • 1:$5.6859
IPP023NE7N3GXKSA1
DISTI # V36:1790_06377158		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		269
  • 2500:$2.7550
  • 500:$3.2599
  • 100:$3.7700
  • 25:$3.9640
  • 10:$4.4040
  • 1:$5.6859
IPP023NE7N3GXKSA1
DISTI # IPP023NE7N3GXKSA1-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		1027In Stock
  • 2500:$2.7533
  • 500:$3.4365
  • 100:$4.0369
  • 25:$4.6580
  • 10:$4.9270
  • 1:$5.4900
IPP023NE7N3GXKSA1
DISTI # 31320936		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1100
  • 5:$2.4198
IPP023NE7N3GXKSA1
DISTI # 32596840		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 3:$5.6859
IPP023NE7N3GXKSA1
DISTI # 31577206		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		269
  • 3:$5.6859
IPP023NE7N3GXK
DISTI # IPP023NE7N3GXKSA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP023NE7N3GXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$2.4900
  • 5000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
  • 500:$2.7900
IPP023NE7N3GXKSA1
DISTI # 47W3476		Infineon Technologies AGMOSFET, N CHANNEL, 75V, 120A, TO220,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.1V,MSL:- RoHS Compliant: Yes0
  • 500:$3.3000
  • 250:$3.6800
  • 100:$3.8800
  • 50:$4.0800
  • 25:$4.2800
  • 10:$4.4700
  • 1:$5.2600
IPP023NE7N3GXKSA1
DISTI # 726-IPP023NE7N3GXKSA		Infineon Technologies AGMOSFET N-Ch 75V 100A TO220-3 OptiMOS 3
RoHS: Compliant		859
  • 1:$5.2100
  • 10:$4.4300
  • 100:$3.8400
  • 250:$3.6400
  • 500:$3.2700
IPP023NE7N3 G
DISTI # 726-IPP023NE7N3G		Infineon Technologies AGMOSFET N-Ch 75V 100A TO220-3 OptiMOS 3
RoHS: Compliant		1401
  • 1:$5.2100
  • 10:$4.4300
  • 100:$3.8400
  • 250:$3.6400
  • 500:$3.2700
IPP023NE7N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		600
  • 1000:$2.3300
  • 500:$2.4500
  • 100:$2.5500
  • 25:$2.6600
  • 1:$2.8700
IPP023NE7N3GXKSA1
DISTI # 9064460P		Infineon Technologies AGMOSFET N-CHANNEL 75V 120A OPTIMOS TO220, TU330
  • 20:£2.0650
IPP023NE7N3GXKSA1
DISTI # 2212851		Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO220
RoHS: Compliant		0
  • 500:$4.9300
  • 250:$5.4900
  • 100:$5.7900
  • 10:$6.6800
  • 1:$7.8500
IPP023NE7N3GXKSA1
DISTI # 2212851		Infineon Technologies AGMOSFET, N-CH, 75V, 120A, TO22017
  • 500:£2.5000
  • 250:£2.7800
  • 100:£2.9300
  • 10:£3.3800
  • 1:£4.4200
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OMO.#: OMO-IDH06G65C5XKSA2

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OMO.#: OMO-C4AF9BU4470A12K

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OMO.#: OMO-V10PM10HM3-H-VISHAY

 DIODE SCHOTTKY 100V 10A TO277A
IDH06G65C5XKSA2

Mfr.#: IDH06G65C5XKSA2

OMO.#: OMO-IDH06G65C5XKSA2-INFINEON-TECHNOLOGIES

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Verfügbarkeit
Aktie:
859
Auf Bestellung:
2842
Menge eingeben:
Der aktuelle Preis von IPP023NE7N3GXKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,21 $
5,21 $
10
4,43 $
44,30 $
100
3,84 $
384,00 $
250
3,64 $
910,00 $
500
3,27 $
1 635,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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