IPP60R145CFD7XKSA1

IPP60R145CFD7XKSA1
Mfr. #:
IPP60R145CFD7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP60R145CFD7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPP60R145CFD7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
145 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
31 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
7.2 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
71 ns
Typische Einschaltverzögerungszeit:
27 ns
Teil # Aliase:
IPP60R145CFD7 SP001715646
Tags
IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
Teil # Mfg. Beschreibung Aktie Preis
IPP60R145CFD7XKSA1
DISTI # V99:2348_21592796
Infineon Technologies AGIPP60R145CFD7XKSA1500
  • 500000:$1.5590
  • 250000:$1.5610
  • 50000:$1.7630
  • 5000:$2.1120
  • 500:$2.1690
IPP60R145CFD7XKSA1
DISTI # V36:1790_21592796
Infineon Technologies AGIPP60R145CFD7XKSA10
  • 500000:$1.4500
  • 250000:$1.4520
  • 50000:$1.6870
  • 5000:$2.1000
  • 500:$2.1690
IPP60R145CFD7XKSA1
DISTI # IPP60R145CFD7XKSA1-ND
Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$2.1693
IPP60R145CFD7XKSA1
DISTI # IPP60R145CFD7XKSA1
Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPP60R145CFD7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$1.4900
  • 2000:$1.5900
  • 3000:$1.5900
  • 500:$1.6900
  • 1000:$1.6900
IPP60R145CFD7XKSA1
DISTI # SP001715646
Infineon Technologies AGHIGH POWER_NEW (Alt: SP001715646)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
  • 50:€1.4900
  • 1:€1.5900
  • 10:€1.5900
  • 25:€1.5900
IPP60R145CFD7XKSA1
DISTI # 71AC0399
Infineon Technologies AGMOSFET, 600V, 16A, 150DEG C, 83W,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.127ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes183
  • 500:$2.0800
  • 250:$2.3200
  • 100:$2.4400
  • 50:$2.5700
  • 25:$2.7000
  • 10:$2.8300
  • 1:$3.3200
IPP60R145CFD7XKSA1
DISTI # 726-IPP60R145CFD7XKS
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
212
  • 1:$3.2900
  • 10:$2.8000
  • 100:$2.4200
  • 250:$2.3000
  • 500:$2.0600
IPP60R145CFD7XKSA1
DISTI # 2916146
Infineon Technologies AGMOSFET, 600V, 16A, 150DEG C, 83W203
  • 500:£1.4900
  • 250:£1.6700
  • 100:£1.7500
  • 10:£2.0300
  • 1:£2.6800
IPP60R145CFD7XKSA1
DISTI # 2916146
Infineon Technologies AGMOSFET, 600V, 16A, 150DEG C, 83W
RoHS: Compliant
183
  • 1000:$2.5000
  • 500:$2.5400
  • 250:$2.6800
  • 100:$2.8400
  • 10:$3.2100
  • 1:$3.4300
Bild Teil # Beschreibung
INA240A2PWR

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Current Sense Amplifiers WIDE CM BI-DIR CURRENT SHUNT MONITOR
SN6505BDBVR

Mfr.#: SN6505BDBVR

OMO.#: OMO-SN6505BDBVR

Power Management Specialized - PMIC Transformer driver for isolated power
SN6505BDBVT

Mfr.#: SN6505BDBVT

OMO.#: OMO-SN6505BDBVT

Power Management Specialized - PMIC Transformer driver for isolated power
FDMS4D0N12C

Mfr.#: FDMS4D0N12C

OMO.#: OMO-FDMS4D0N12C

MOSFET PTNG 120V N-FET 118A
FDMS86182

Mfr.#: FDMS86182

OMO.#: OMO-FDMS86182

MOSFET PTNG 100/20V Nch Power Trench MOSFET
FCPF190N60

Mfr.#: FCPF190N60

OMO.#: OMO-FCPF190N60

MOSFET SuperFET2, 190mohm
0505030.MXEP

Mfr.#: 0505030.MXEP

OMO.#: OMO-0505030-MXEP-LITTELFUSE

Cartridge Fuses 500V 30A 3AB PT PB-FREE
0216016.MXEP

Mfr.#: 0216016.MXEP

OMO.#: OMO-0216016-MXEP-LITTELFUSE

Cartridge Fuses 250V 16A FA HBC PT 5X20MM
EVALPWD5F60

Mfr.#: EVALPWD5F60

OMO.#: OMO-EVALPWD5F60-STMICROELECTRONICS

IND. & POWER CONV.
FCPF190N60

Mfr.#: FCPF190N60

OMO.#: OMO-FCPF190N60-ON-SEMICONDUCTOR

Darlington Transistors MOSFET SuperFET2, 190mohm
Verfügbarkeit
Aktie:
712
Auf Bestellung:
2695
Menge eingeben:
Der aktuelle Preis von IPP60R145CFD7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,29 $
3,29 $
10
2,80 $
28,00 $
100
2,42 $
242,00 $
250
2,30 $
575,00 $
500
2,06 $
1 030,00 $
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