We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPB50R299CPATMA1 DISTI # IPB50R299CPATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 550V 12A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB50R299CPATMA1 DISTI # IPB50R299CPATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 550V 12A 3-Pin TO-263 T/R - Bulk (Alt: IPB50R299CPATMA1) Min Qty: 348 Container: Bulk | Americas - 0 |
|
| IPB50R299CP DISTI # 726-IPB50R299CP | Infineon Technologies AG | MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP RoHS: Compliant | 2 |
|
| IPB50R299CPATMA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| IPB50R299CPATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 59550 |
|
| IPB50R299CPATMA1 DISTI # 8275158P | Infineon Technologies AG | MOSFET N-CH 12A 550V COOLMOS TO263, RL | 810 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IPB50R299CPATMA1 OMO.#: OMO-IPB50R299CPATMA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: IPB50R299CPATMA1 |
MOSFET N-CH 550V 12A TO-263 |
|
Mfr.#: IPB50R299CP PB-FREE OMO.#: OMO-IPB50R299CP-PB-FREE-1190 |
Neu und Original |
|
|
Mfr.#: IPB50R299CP OMO.#: OMO-IPB50R299CP-124 |
Darlington Transistors MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP |