PartNumber | IPB50N10S3L-16 | IPB50N10S3L16ATMA1 | IPB50CN10NGATMA1 |
Description | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | MOSFET N-CH 100V 50A TO263-3 | MOSFET N-CH 100V 20A TO263-3 |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 50 A | - | - |
Rds On Drain Source Resistance | 15.4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 64 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 100 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS-T | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 5 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 5 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 28 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Part # Aliases | IPB50N10S3L16ATMA1 IPB5N1S3L16XT SP000386183 | - | - |
Unit Weight | 0.139332 oz | - | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Infineon Technologies |
IPB50N10S3L-16 | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | |
IPB530N15N3 G | MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3 | ||
IPB50R199CP | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | ||
IPB50R140CP | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | ||
IPB50R140CPATMA1 | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | ||
IPB50R199CPATMA1 | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | ||
IPB50N12S3L15ATMA1 | MOSFET N-CHANNEL 100+ | ||
IPB530N15N3GATMA1 | MOSFET N-CH 150V 21A TO263-3 | ||
IPB50N10S3L16ATMA1 | MOSFET N-CH 100V 50A TO263-3 | ||
IPB50R299CPATMA1 | MOSFET N-CH 550V 12A TO-263 | ||
IPB50N12S3L15ATMA1 | MOSFET N-CHANNEL_100+ | ||
IPB50CN10NGATMA1 | MOSFET N-CH 100V 20A TO263-3 | ||
IPB50R140CPATMA1 | MOSFET N-CH 550V 23A TO-263 | ||
IPB50R199CPATMA1 | MOSFET N-CH 550V 17A TO-263 | ||
IPB50R250CPATMA1 | MOSFET N-CH 550V 13A TO-263 | ||
Infineon Technologies |
IPB50R299CPATMA1 | MOSFET LOW POWER_LEGACY | |
IPB50R250CPATMA1 | MOSFET LOW POWER_LEGACY | ||
IPB50CN10N | Neu und Original | ||
IPB50CN10NG | Neu und Original | ||
IPB50N06 | Neu und Original | ||
IPB50N06NG | Neu und Original | ||
IPB50N10S3L16 | MOSFET, AEC-Q101, N-CH, 100V, TO-263 | ||
IPB50N12S3L-15 | Neu und Original | ||
IPB50R140CP | Trans MOSFET N-CH 550V 23A 3-Pin(2+Tab) TO-263 | ||
IPB50R140CP 5R140P | Neu und Original | ||
IPB50R140CPS | Neu und Original | ||
IPB50R199CP 5R199P | Neu und Original | ||
IPB50R199CPS | Neu und Original | ||
IPB50R250CP | - Bulk (Alt: IPB50R250CP) | ||
IPB50R250CP 5R250P | Neu und Original | ||
IPB50R299CP PB-FREE | Neu und Original | ||
IPB50R350CP | Neu und Original | ||
IPB530N15N3G | Neu und Original | ||
IPB56N03LT | Neu und Original | ||
IPB50R299CP | Darlington Transistors MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP | ||
IPB530N15N3 G | Darlington Transistors MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3 | ||
IPB50N10S3L-16 | Darlington Transistors MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | ||
IPB50CN10N G | IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2 | ||
IPB50R199CP | RF Bipolar Transistors MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP |